Siemens BCV61C, BCV61B, BCV61A Datasheet

NPN Silicon Double Transistors BCV 61

Preliminary Data

● To be used as a current mirror

● Good thermal coupling and VBE matching

● High current gain

● Low emitter-saturation voltage

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BCV 61 A
BCV 61 B
BCV 61 C

1Js
1Ks
1Ls

Q62702-C2155
Q62702-C2156
Q62702-C2157

SOT-143

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage

CE0 30 V

V

(transistor T1)
Collector-base voltage (open emitter)

VCB0 30

(transistor T1)
Emitter-base voltage VEBS 6
Collector current IC 100 mA

1)

Collector peak current ICM 200
Base peak current (transistor T1) IBM 200
Total power dissipation, T

S ≤ 99 ˚C

2)

Ptot 300 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 240 K/W

th JS ≤ 170

5.91

Electrical Characteristics

I
I

I

I

I

I
I

I
I

I
I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics for transistor T1

BCV 61

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CE0 30 – –

C = 10 mA, IB = 0

Collector-base breakdown voltage

C = 10 µA, IB = 0

Emitter-base breakdown voltage

E = 10 µA, IC = 0

Collector-base cutoff current

CB = 30 V, IE = 0

V

CB = 30 V, IE = 0, TA = 150 ˚C

V

DC current gain

C = 0.1 mA, VCE = 5 V
C = 2 mA, VCE = 5 V BCV 61 A

1)

BCV 61 B
BCV 61 C

Collector-emitter saturation voltage

C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA

Base-emitter saturation voltage

C = 10 mA, IC = 0.5 mA
C = 100 mA, IC = 5 mA

1)

1)

V

(BR)CB0 30 – –

V

(BR)EBS 6––

CB0

I

V

V

–
–

100
110
200
420

CEsat

–
–

BEsat

–
–

–
–

–
180
290
520

90
200

700
900

15
5

220
450
800

250
600

–
–

VCollector-emitter breakdown voltage

nA

µA

–hFE

mV

Base-emitter voltage

C = 2 mA, VCE = 5 V
C = 10 mA, VCE = 5 V

BE

V

580
–

660
–

700
770

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2