Siemens BCV49, BCV29 Datasheet

NPN Silicon Darlington Transistors BCV 29

BCV 49

● For general AF applications

● High collector current

● High current gain

● Complementary types: BCV 28, BCV 48 (PNP)

Type Ordering Code

BCV 29
BCV 49

Marking

EF
EG

(tape and reel)

Q62702-C1853
Q62702-C1832

Pin Configuration

1 2 3 4

B C E C

Package

SOT-89

Maximum Ratings
Parameter Symbol Values Unit

BCV 29 BCV 49

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current ICM

CE0 V

30 60
40 80

EB0

10 10

500

800
Base current IB 100
Peak base current I
Total power dissipation, T

S = 130 ˚C P1tot W

BM 200

1

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 75 K/W

Junction - soldering point Rth JS ≤ 20

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BCV 29

BCV 49

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 10 mA

BCV 29
BCV 49

Collector-base breakdown voltage

C = 100 µA

BCV 29

(BR)CB0

V

BCV 49

30
60

40
80

–
–

–
–

–
–

–
–

VCollector-emitter breakdown voltage

Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 10 – –
Collector cutoff current

VCB = 30 V BCV 29

CB = 60 V BCV 49

V

CB = 30 V, TA = 150 ˚C BCV 29

V

CB = 60 V, TA = 150 ˚C BCV 49

V

I

CB0

–
–
–
–

–
–
–
–

100
100
10
10

nA
nA

µA
µA

nAEmitter cutoff current, VEB = 4 V IEB0 – – 100

DC current gain

C = 100 µA, VCE = 1 V BCV 29

1)

BCV 49

C = 10 mA, VCE = 5 V BCV 29

BCV 49

C = 100 mA, VCE = 5 V BCV 29
C = 0.5 A, VCE = 5 V BCV 29

Collector-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage

C = 100 mA; IB = 0.1 mA

BCV 49
BCV 49

1)

1)

hFE

4000
2000
10000
4000
20000
10000
4000
2000

–
–
–
–
–
–
–
–

–
–
–
–
–
–
–
–

VCEsat ––1

VBEsat – – 1.5

–

V

AC characteristics

f

T – 150 –

C = 50 mA, VCE = 5 V, f = 20 MHz

CB = 10 V, f = 1 MHz

V

1)

Pulse test: t ≤ 300 µs, D = 2 %.

C

obo – 3.5 –

MHzTransition frequency

pFOutput capacitance

Semiconductor Group 2