Siemens BCV48, BCV28 Datasheet
PNP Silicon Darlington Transistors BCV 28
BCV 48
● For general AF applications
● High collector current
● High current gain
● Complementary types: BCV 29, BCV 49 (NPN)
Type Ordering Code
BCV 28
BCV 48
Marking
ED
EE
(tape and reel)
Q62702-C1852
Q62702-C1854
Pin Configuration
1 2 3 4
B C E C
Package
SOT-89
Maximum Ratings
Parameter Symbol Values Unit
BCV 28 BCV 48
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current ICM
CE0 V
30 60
40 80
EB0
10 10
500
800
Base current IB 100
Peak base current I
Total power dissipation, T
S = 124 ˚C Ptot W
BM 200
1
1)
Junction temperature Tj ˚C
Storage temperature range T
stg
150
– 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 72 K/W
Junction - soldering point Rth JS ≤ 17
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCV 28
BCV 48
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA
BCV 28
BCV 48
Collector-base breakdown voltage
C = 100 µA
BCV 28
(BR)CB0
V
BCV 48
30
60
40
80
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 10 – –
Collector cutoff current
VCB = 30 V BCV 28
CB = 60 V BCV 48
V
CB = 30 V, TA = 150 ˚C BCV 28
V
CB = 60 V, TA = 150 ˚C BCV 48
V
I
CB0
–
–
–
–
–
–
–
–
100
100
10
10
nA
nA
µA
µA
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
DC current gain
C = 100 µA, VCE = 1 V BCV 28
C = 10 mA, VCE = 5 V BCV 28
C = 100 mA, VCE = 5 V BCV 28
C = 0.5 A, VCE = 5 V BCV 28
Collector-emitter saturation voltage
C = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage
C = 100 mA; IB = 0.1 mA
1)
BCV 48
BCV 48
BCV 48
BCV 48
1)
1)
4000
2000
10000
4000
20000
10000
4000
2000
VCEsat ––1
VBEsat – – 1.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–hFE
V
AC characteristics
C = 50 mA, VCE = 5 V, f = 20 MHz
CB = 10 V, f = 1 MHz
V
1)
Pulse test: t ≤ 300 µs, D = 2 %.
f
T – 200 –
C
obo – 4.5 –
MHzTransition frequency
pFOutput capacitance
Semiconductor Group 2
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