Siemens BCR519 Datasheet
Semiconductor Group
1 Dec-18-1996
BCR 519
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7kΩ)
Type Marking Ordering Code Pin Configuration Package
BCR 519 XKs UPON INQUIRY 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO
50 V
Collector-base voltage
V
CBO
50
Emitter-base voltage
V
EBO
5
Input on Voltage
V
i(on)
30
DC collector current
I
C
500 mA
Total power dissipation,
T
S
= 79
°C
P
tot
330 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 325 K/W
Junction - soldering point
R
thJS
≤
215
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
2 Dec-18-1996
BCR 519
Electrical Characteristics at
T
A
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
V
(BR)CEO
50 - -
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
V
(BR)CBO
50 - -
Base-emitter breakdown voltage
I
E
= 10 µA,
I
C
= 0
V
(BR)EBO
5 - -
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
- - 100
nA
DC current gain
I
C
= 50 mA,
V
CE
= 5 V
h
FE
120 - 630
-
Collector-emitter saturation voltage 1)
I
C
= 50 mA,
I
B
= 2.5 mA
V
CEsat
- - 0.3
mV
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
V
i(off)
0.4 - 0.8
V
Input on Voltage
I
C
= 10 mA,
V
CE
= 0.3 V
V
i(on)
0.5 - 1.5
Input resistor
R
1
3.2 4.7 6.2 k
Ω
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V, f = 100 MHz
f
T
- 100 -
MHz
1) Pulse test: t < 300µs; D < 2%
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