Siemens BCR48PN Datasheet
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor
BCR 48PN
NPN: R1 = 47kΩ, R2 = 47k
Ω
PNP: R1 = 2.2kΩ, R2 = 47kΩ
Tape loading orientation
Type Marking Ordering Code Pin Configuration Package
BCR 48PN WTs Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage NPN
V
V
V
CEO
CBO
EBO
50 V
50
10
Emitter-base voltage PNP
DC collector current NPN
DC collector current PNP
Input on voltage NPN
Input on voltage PNP
Total power dissipation,
T
= 115°C
S
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
V
I
I
V
V
P
T
T
R
R
C
C
EBO
i(on)
i(on)
tot
j
stg
thJA
thJS
5
70 mA
100
50 V
10
250 mW
150 °C
- 65 ... + 150
≤
275 K/W
≤ 140
1 Dec-09-1996
BCR 48PN
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
I
= 100 µA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 100 µA,
C
I
B
= 0
Collector cutoff current
V
= 40 V,
CB
I
E
= 0
Emitter cutoff current
V
= 10 V,
EB
I
C
= 0
DC current gain
I
= 5 mA,
C
V
CE
= 5 V
Collector-emitter saturation voltage 1)
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
50 - -
50 - -
nA
- - 100
µA
- - 164
-
70 - -
mV
I
= 10 mA,
C
I
= 0.5 mA
B
Input off voltage
I
= 100 µA,
C
V
CE
= 5 V
Input on Voltage
I
= 2 mA,
C
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
I
= 10 mA,
C
V
= 5 V, f = 100 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1) Pulse test: t < 300µs; D < 2%
V
V
R
R
f
C
T
i(off)
i(on)
1
/
R
1
cb
- - 0.3
V
0.8 - 1.5
1 - 3
32 47 62 k
2
0.9 1 1.1 -
Ω
MHz
- 100 pF
- 3 -
Semiconductor Group
2 Dec-09-1996
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