Siemens BCR400W Datasheet

Active Bias Controller

Characteristics

Supplies stable bias current even at low battery voltage

•
and extreme ambient temperature variation

Low voltage drop of 0.7V

•

Application notes

Stabilizing bias current of NPN transistors and FETs from

•

from less than 0.2mA up to more than 200mA

Ideal supplement for SIEGET and other RF transistors

•

also usable as current source up to 5mA

•

BCR 400W

Type Marking Ordering Code Pin Configuration Package

BCR 400W W4s Q62702-C2481 1

(E

NPN,BNPN,CNPN

GND/E

are electrodes of a stabilized NPN transistor)

NPN

Contr/B

2

NPN

3

V

Rext/C

4

S

NPN

SOT-343

Maximum Ratings
Parameter Symbol Values Unit

Supply voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation,

T

= 117°C

S

Junction temperature
Storage temperature

V

S

I

Contr.

V

Contr.

V

R

P

tot

T

j

T

stg

18 V
10 mA
16 V

0.5
330 mW
150 °C

- 65 ... + 150

Thermal Resistance

Junction ambient

1)

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

R
R

thJA
thJS

≤

170 K/W

≤ 100

Semiconductor Group

1 Nov-27-1996

BCR 400W

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Additional current consumption

V

= 3 V

S

Lowest stabilizing current

V

= 3 V

S

I

0

I

min

µA

- 20 40
mA

- 0.1 -

DC Characteristics with stabilized NPN-Transistors

Lowest sufficient battery voltage

I

(NPN)

B

Voltage drop

I

= 25 mA

C

< 0.5 mA

(V

S

-

V

CE

)

V

V

Smin

drop

V

- 1.6 -

- 0.65 -

Change of

h

> 50

FE

Change of

V

> 3 V

S

Change of

I

versus

C

I

versus

C

I

versus

C

h

V

T

FE

S

A

∆

I

/

I

C

C

∆hFE/hFE

- 0.08 -

∆

I

/

I

C

C

VS/VS

∆

- 0.15 -

∆

I

/

I

C

C

- 0.2 - %/K

Semiconductor Group

2 Nov-27-1996

BCR 400W

Collector current

I

and

h

C

Parameter

10

mA

I

C

10

10

10

refer to stabilized NPN Transistor

FE

R

(Ω)

ext.

3

2

1

0

I

C

= f(

h

FE

)

Collector Current

I

C

= f(

V

)

S

of stabilized NPN Transistor

5.9

67

760

Parameter

10

mA

I

C

10

10

10

R

(Ω)

ext.

3

2.1

2

1

0

5.9

12.4

67

760

4.3k

-1

10

0 50 100 150 200 250 - 350

Voltage drop

1.0

drop

V

0.8

0.7

0.6

V

V

drop

= f(

-1

10

h

FE

I

)

C

Collector current

0 2 4 6 8 V 11

I

= f(

R

C

ext.

)

V

S

of stabilized NPN Transistor

3

10

mA

I

C

10

10

10

2

1

0

0.5
10

-2

10

-1

Semiconductor Group

10

-1

0

10

1

10

2

I

C

mA

10

3

10

10

0

10

1

10

2

10 3 Ohm

R

ext.

3 Nov-27-1996