Siemens BCR185W Datasheet
BCR 185W
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 10kΩ, R2 = 47kΩ)
Type Marking Ordering Code Pin Configuration Package
BCR 185W WNs Q62702-C2280 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
Junction temperature
Storage temperature
T
= 124°C
S
V
V
V
V
I
P
T
T
C
CEO
CBO
EBO
i(on)
tot
j
stg
50 V
50
6
20
100 mA
250 mW
150 °C
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
R
R
thJA
thJS
≤
240 K/W
≤ 105
Semiconductor Group
1 Nov-27-1996
BCR 185W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 10 µA,
C
I
B
= 0
Collector cutoff current
V
= 40 V,
CB
I
E
= 0
Emitter cutoff current
V
= 6 V,
EB
I
C
= 0
DC current gain
I
= 5 mA,
C
V
CE
= 5 V
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
50 - -
50 - -
nA
- - 100
µA
- - 167
-
70 - -
Collector-emitter saturation voltage 1)
I
= 10 mA,
C
I
= 0.5 mA
B
Input off voltage
I
= 100 µA,
C
V
CE
= 5 V
Input on Voltage
I
= 2 mA,
C
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
= 10 mA,
C
V
= 5 V, f = 1 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1) Pulse test: t < 300µs; D < 2%
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
f
T
C
cb
V
- - 0.3
0.5 - 1
0.5 - 1.4
7 10 13 k
/
R
2
0.19 0.21 0.24 -
Ω
MHz
- 200 pF
- 2 -
Semiconductor Group
2 Nov-27-1996
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