Page 1
BC 847S
NPN Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistors
in one package
Type Marking Ordering Code Pin Configuration Package
BC 847S 1Cs Q62702-2372 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation,
Junction temperature
Storage temperature
T
= 115°C
S
V
V
V
V
I
C
I
CM
P
T
T
CEO
CBO
CES
EBO
tot
j
stg
45 V
50
50
6
100 mA
200
250 mW
150 °C
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
R
R
thJA
thJS
≤
275 K/W
≤
140
Semiconductor Group
1 Jan-20-1997
Page 2
BC 847S
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I
= 10 mA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 10 µA,
C
I
B
= 0
Collector-emitter breakdown voltage
I
= 10 µA,
C
V
BE
= 0
Base-emitter breakdown voltage
I
= 10 µA,
E
I
C
= 0
Collector cutoff current
V
V
CB
CB
= 30 V,
= 30 V,
I
= 0 ,
E
I
= 0 ,
E
T
= 25 °C
A
T
= 150 °C
A
V
(BR)CEO
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
45 - -
50 - -
50 - -
6 - -
-
-
-
-
V
15 nA
5
µA
DC current gain 1)
I
= 10 µA,
C
I
= 2 mA,
C
V
V
CE
= 5 V
CE
= 5 V
Collector-emitter saturation voltage 1)
I
= 10 mA,
C
I
= 100 mA,
C
I
= 0.5 mA
B
I
= 5 mA
B
Base-emitter saturation voltage 1)
I
= 10 mA,
C
I
= 100 mA,
C
I
= 0.5 mA
B
I
= 5 mA
B
Base-emitter voltage
I
= 10 mA,
C
V
CE
= 5 V
1) Pulse test: t < 300µs; D < 2%
h
FE
V
CEsat
V
BEsat
V
BE
110
-
-
-
580
-
250
290
90
200
700
900
660
-
-
630
mV
250
650
-
700
770
Semiconductor Group
2 Jan-20-1997
Page 3
BC 847S
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics per Transistor
Transition frequency
I
= 20 mA,
C
V
= 5 V, f = 100 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Short-circuit input impedance
I
= 2 mA,
C
V
= 5 V, f = 1 kHz
CE
Open-circuit reverse voltage transfer ratio
I
= 2 mA,
C
V
= 5 V, f = 1 kHz
CE
Short-circuit forward current transfer ratio
f
C
C
h
h
h
T
11e
12e
21e
cb
eb
- 250 -
- 2 -
- 10 -
- 4.5 -
- 2 -
MHz
pF
Ω
k
-4
10
-
I
= 2 mA,
C
V
= 5 V, f = 1 kHz
CE
Open-circuit output admittance
I
= 2 mA,
C
V
= 5 V, f = 1 kHz
CE
h
22e
- 330 µS
- 30 -
Semiconductor Group
3 Jan-20-1997
Page 4
BC 847S
Total power dissipation
P
tot
* Package mounted on epoxy
300
mW
P
tot
200
150
100
50
T
A
= f (
T
*;
T
)
A
S
T
S
0
0 20 40 60 80 100 120 °C 150
Permissible Pulse Load
3
10
K/W
R
thJS
2
10
1
10
0
10
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
= f(
TA,T
S
t
)
p
Permissible Pulse Load
P
totmax
/
P
totDC
= f(
t
)
p
3
10
-
P
/
P
totDC
10
10
2
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
-1
10
10
-6
10
-5
Semiconductor Group
10
0
-4
10
-3
10
-2
10
-1
t
p
0
10
s
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
0
10
s
4 Jan-20-1997
Page 5
BC 847S
Transition frequency
VCE = 5V
f
T
= f (
I
)
C
Collector-base capacitance
Emitter-base capacitance
C
C
CBO
EBO
= f (
= f (
V
V
CBO
EBO
)
)
Collectot cutoff current
V
= 30V
CB
I
CBO
= f (
T
)
A
Collector-emitter saturation voltage
I
= f (
C
V
CEsat
),
h
= 20
FE
Semiconductor Group
5 Jan-20-1997
Page 6
BC 847S
DC current gain
V
= 5V
CE
h
= f (
I
FE
)
C
Base-emitter saturation voltage
I
= f (
C
V
BEsat
),
h
= 20
FE
Semiconductor Group
6 Jan-20-1997
Loading...