Siemens BBY56-03W Datasheet
BBY 56-03W
Semiconductor Group
Au -14-19981
Silicon Tuning Diode
Preliminary data
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
• Very low capacitance spread
VPS05176
1
2
Type Marking Ordering Code Pin Configuration Package
BBY 56-03W 6 cathd. red Q62702- 1 = C 2 = A SOD-323
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
10 V
Forward current
I
F
20 mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BBY 56-03W
Semiconductor Group
Au -14-19982
Electrical Characteristics at
T
A
= 25 °C, unless otherwise specified.
Parameter
ValuesSymbol Unit
max.min. typ.
DC characteristics
I
R
-Reverse current
V
R
= 8 V
1- nA
I
R
µA-Reverse current
V
R
= 8 V,
T
A
= 65 °C
100-
AC characteristics
Diode capacitance
V
R
= 0.32 V, f = 1 MHz
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 2.38 V, f = 1 MHz
V
R
= 3 , f = 1 MHz
C
T
59
39
22
19.4
15.9
-
-
-
-
-
67
43
27.2
23.7
19
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V, f = 1 MHz
C
T1
/
C
T3
- 2.45 - -
Series resistance
V
R
= 1 V, f = 330 MHz
r
s
- 0.3 -
Ω
Case capacitance
f
= 1 MHz
C
C
- 0.09 - pF
Series inductance chip to ground
L
s
- 0.6 - nH
Semiconductor Group 2 1998-11-01
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