Siemens BBY55-03W Datasheet
BBY 55-03W
Semiconductor Group
Apr-30-19981
Silicon Tuning Diode
Preliminary data
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
• Very low capacitance spread
VPS05176
1
2
Type Marking Ordering Code Pin Configuration Package
BBY 55-03W 7 white Q62702-B0911 1 = C 2 = A SOD-323
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
16 V
Forward current
I
F
20 mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BBY 55-03W
Semiconductor Group
Apr-30-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol UnitValues
min. max.typ.
DC characteristics
I
R
- -Reverse current
V
R
= 15 V
3 nA
I
R
- - 100Reverse current
V
R
= 15 V,
T
A
= 65 °C
AC characteristics
Diode capacitance
V
R
= 2 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
V
R
= 10 V, f = 1 MHz
14
10
5.5
15
11
6
C
T
16
12
6.5
pF
2 -Capacitance ratio
V
R
= 2 V,
V
R
= 10 V, f = 1 MHz
C
T2/CT10
2.5 3
-
r
s
0.35 Ω0.15Series resistance
V
R
= 5 V, f = 470 MHz
- 0.09 -
C
C
Case capacitance
f
= 1 MHz
pF
- 0.6Series inductance
L
s
- nH
Semiconductor Group 2 1998-11-01
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