Siemens BBY53-03W Datasheet
BBY 53-03W
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
Type Marking Ordering Code Pin Configuration Package
BBY 53-03W white/5 Q62702-B0825 1 = C 2 = A SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
V
I
T
T
F
R
op
stg
6 V
20 mA
- 55 ... + 150 °C
- 55 ... + 150
Semiconductor Group 1 Sep-11-1996
BBY 53-03W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 4 V,
R
V
= 4 V,
R
T
= 25 °C
A
T
= 65 °C
A
I
R
-
-
-
-
10
200
nA
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 3 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V,
R
V
= 3 V, f = 1 MHz
R
C
C
T
T1
pF
4.8
1.85
/
C
T3
5.3
2.4
5.8
3.1
-
1.8 2.2 2.6
Series resistance
V
= 1 V, f = 1 GHz
R
Case capacitance
f
= 1 MHz
Series inductance chip to ground
r
C
L
s
Ω
- 0.37 -
C
pF
- 0.12 -
s
- 2 - nH
Semiconductor Group 2 Sep-11-1996
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