Siemens BBY53-02W Datasheet
BBY 53-02W
Semiconductor Group
Au -20-19981
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
• High ratio at low reverse voltage
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 53-02W L Q62702-B0862 1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
6 V
Forward current
I
F
20 mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BBY 53-02W
Semiconductor Group
Au -20-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 4 V
I
R
- - 10 nA
Reverse current
V
R
= 4 V,
T
A
= 65 °C
I
R
- - 200
AC characteristics
5.3
2.4
5.8
3.1
C
T
4.8
1.85
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
pF
2.2
C
T1
/
C
T3
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V, f = 1 MHz
2.6 -1.8
0.37Series resistance
V
R
= 1 V, f = 1 GHz
-
r
s
-
Ω
0.12 -Case capacitance
f
= 1 MHz
-
C
C
pF
Series inductance chip to ground nH
L
s
1.8 --
Semiconductor Group 2 1998-11-01
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