Siemens BBY52-02W Datasheet
BBY 52-02W
Semiconductor Group
Jul-23-19981
Silicon Tuning Diode
Preliminary data
• High Q hyperband tuning diode
• Low series inductance
• Designed for low tuning voltage operation
• For VCO’s in mobile communications equipment
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 52-02W K Q62702-B0860 1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
7 V
Forward current
I
F
20 mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BBY 52-02W
Semiconductor Group
Jul-23-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 6 V
I
R
- - 10 nA
Reverse current
V
R
= 6 V,
T
A
= 65 °C
I
R
- - 100
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
1.4
0.95
0.9
0.85
1.85
1.5
1.35
1.15
2.2
2
1.75
1.45
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V, f = 1 MHz
C
T1
/
C
T4
1.1 1.6 2.1 -
Series resistance
V
R
= 1 V, f = 1 GHz
r
s
- 0.9 1.7
Ω
Case capacitance
f
= 1 MHz
C
C
- 0.09 - pF
Series inductance chip to ground
L
s
- 0.6 - nH
Semiconductor Group 2 1998-11-01
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