Siemens BBY52 Datasheet
BBY 52
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package
BBY 52 S5s Q62702-B599 1 = A1 2 = A2 3 = C1/2 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
V
I
T
T
F
R
op
stg
7 V
20 mA
- 55 ... + 150 °C
- 55 ... + 150
Semiconductor Group 1 Jul-04-1996
BBY 52
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 6 V,
R
V
= 6 V,
R
T
= 25 °C
A
T
= 65 °C
A
I
R
-
-
-
-
10
200
nA
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 3 V, f = 1 MHz
R
V
= 4 V, f = 1 MHz
R
C
T
1.4
-
-
0.85
1.85
1.5
1.35
1.15
2.2
-
-
1.45
pF
Capacitance ratio
V
= 1 V,
R
V
= 4 V, f = 1 MHz
R
Series resistance
V
= 1 V, f = 1 GHz
R
Case capacitance
f
= 1 MHz
Series inductance chip to ground
C
r
C
L
/
T1
C
T4
-
1.1 1.6 2.1
s
Ω
- 0.9 1.8
C
pF
- 0.12 -
s
- 2 - nH
Semiconductor Group 2 Jul-04-1996
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