Siemens BBY51-07 Datasheet
Semiconductor Group 1 Jan-08-1997
BBY 51-07
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package
BBY 51-07 HHs Q62702- 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings per diode
Parameter Symbol Values Unit
Diode reverse voltage
V
R
7 V
Forward current
I
F
20 mA
Operating temperature range
T
op
- 55 ... + 150 °C
Storage temperature
T
stg
- 55 ... + 150
Semiconductor Group 2 Jan-08-1997
BBY 51-07
Electrical Characteristics at
T
A
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics per diode
Reverse current
V
R
= 6 V,
T
A
= 25 °C
V
R
= 6 V,
T
A
= 65 °C
I
R
-
-
-
200
10
nA
AC characteristics per diode
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
T
2.6
2.9
3.6
4.8
3.1
3.5
4.2
5.3
3.5
4.2
5
6
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V, f = 1 MHz
C
T1
/
C
T4
1.55 1.75 2.15
-
Capacitance difference
V
R
= 1 V,
V
R
= 3 V, f = 1 MHz
C
1V
-
C
3V
1.4 1.78 2.2
pF
Capacitance difference
V
R
= 3 V,
V
R
= 4 V, f = 1 MHz
C
3V
-
C
4V
0.3 0.5 0.7
Series resistance
V
R
= 1 V, f = 1 GHz
r
s
- 0.37 -
Ω
Case capacitance
f
= 1 MHz
C
C
- 0.12 -
pF
Series inductance chip to ground
L
s
- 2 - nH
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