Siemens BBY51-03W Datasheet
Silicon Tuning Diode
l
High Q hyperabrupt tuning diode
l
Designed for low tuning voltage operation
l
For VCO's in mobile communications equipment
BBY 51-03W
Type Marking Ordering Code
(tape and reel)
BBY 51-03W H Q62702-B663 C1 A2 SOD-323
Maximum Ratings
Parameter Symbol BBY 51-03W Unit
Reverse voltage
Forward current
Operating temperature range
Storage temperature range
Pin Configuration
1 2
V
R 7V
I
F
T
op
T
stg
-55 +150°C °C
-55...+150°C °C
Package
20 mA
1)
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 Edition A01, 03.05.95
BBY 51-03W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Reverse current
V
= 6 V
R
V
= 6 V,
R
T
= 65 °C
A
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 3 V, f = 1 MHz
R
V
= 4 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, 4 V, f = 1 MHz
R
Capacitance difference
V
= 1 V, 3 V,f = 1MHz
R
V
= 3 V, 4 V,f = 1MHz
R
Series resistance
V
= 1 V, f = 1 GHz
R
Case capacitance
f
= 1 MHz
Serien inductance
I
C
C
C
C
r
C
L
R
s
T
T1V
1
3V
C
s
-
-
4.5
3.4
2.7
2.5
/
C
T4V
-
-
5.3
4.2
3.5
3.1
10
200
6.1
5.2
4.6
3.7
1.55 1.75 2.2
-
C
V
-
C
3V
4V
1.4
0.30
1.78
0.50
2.2
0.7
- 0.37 -
- 0.12 -
-2-nH
nA
pF
-
pF
Ω
pF
____________________
1) Without 100 % test, correlation limits
Semiconductor Group 2 Edition A01, 03.05.95
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