Siemens BBY51-02W Datasheet
BBY 51-02W
Semiconductor Group
Jul-23-19981
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
• For VCO’s in mobile communications equipment
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 51-02W I Q62702-B0858 1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol UnitValue
Diode reverse voltage
V
R
V7
Forward current
I
F
mA20
-55 ...+150Operating temperature range °C
T
op
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BBY 51-02W
Semiconductor Group
Jul-23-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
I
R
- - 10 nAReverse current
V
R
= 6 V
I
R
- - 100Reverse current
V
R
= 6 V,
T
A
= 65 °C
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
4.5
3.4
2.7
2.5
C
T
pF
6.1
5.2
4.6
3.7
5.3
4.2
3.5
3.1
2.2Capacitance ratio
V
R
= 1 V,
V
R
= 4 V, f = 1 MHz
-1.751.55
C
T1
/
C
T4
2.2Capacitance difference
V
R
= 1 V,
V
R
= 3 V, f = 1 MHz
C
1V
-
C
3V
1.781.4 pF
0.7
C
3V
-
C
4V
0.50.3Capacitance difference
V
R
= 3 V,
V
R
= 4 V, f = 1 MHz
-Series resistance
V
R
= 1 V, f = 1 GHz
Ω
r
s
0.37-
Case capacitance
f
= 1 MHz
pF-
C
C
- 0.09
Series inductance chip to ground
L
s
- 0.6 - nH
Semiconductor Group 2 1998-11-01
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