Siemens BBY51 Datasheet
BBY 51
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package
BBY 51 S3 Q62702-B631 1 = A 2 = A 3 = C1/C2SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
V
I
T
T
F
R
op
stg
7 V
20 mA
- 55 ... + 150 °C
- 55 ... + 150
Semiconductor Group 1 Jan-09-1997
BBY 51
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 6 V,
R
V
= 6 V,
R
T
= 25 °C
A
T
= 65 °C
A
I
R
-
-
-
-
10
200
nA
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 3 V, f = 1 MHz
R
V
= 4 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V,
R
V
= 4 V, f = 1 MHz
R
C
C
T
T1
pF
4.5
3.4
2.7
2.5
/
C
T4
5.3
4.2
3.5
3.1
6.1
5.2
4.6
3.7
-
1.55 1.75 2.2
Capacitance difference
V
= 1 V,
R
V
= 3 V, f = 1 MHz
R
Capacitance difference
V
= 3 V,
R
V
= 4 V, f = 1 MHz
R
Series resistance
V
= 1 V, f = 1 GHz
R
Case capacitance
f
= 1 MHz
Series inductance chip to ground
C
C
r
C
L
-
1V
C
3V
pF
1.4 1.78 2.2
-
C
3V
4V
0.3 0.5 0.7
s
Ω
- 0.37 -
C
pF
- 0.12 -
s
- 2 - nH
Semiconductor Group 2 Jan-09-1997
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