Siemens BB512 Datasheet
BB 512
Silicon Variable Capacitance Diode BB 512
● For AM tuning applications
● Specified tuning range 1 … 8 V
Type Ordering Code
(tape and reel)
BB 512 Q62702-B479 white M SOD-123
12
C A
Marking PackagePin Configuration
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage VR 12 V
RMReverse voltage (R ≥ 10 kΩ)15
V
Forward current, TA ≤ 60 ˚C IF 50 mA
Operating temperature range T
Storage temperature range T
op – 55 … + 150 ˚C
stg – 55 … + 150
Thermal Resistance
Junction - ambient R
th JA ≤ 600 K/W
Semiconductor Group 1
10.94
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BB 512
Parameter Symbol
Reverse current
R = 10 V
V
R = 10 V, TA = 60 ˚C
V
Diode capacitance, f = 1 MHz
R = 1 V
V
R = 8 V
V
Capacitance ratio
R = 1 V, 8 V
V
Series resistance
R nA
I
T pF
C
C
T1
CT8
r
s – 1.4 – Ω
f= 0.5 MHz, VR = 1 V
Figure of merit
f= 0.5 MHz, V
R = 1 V
Temperature coefficient of diode capacitance
f= 1 MHz, V
R = 1 V
Capacitance matching
R = 1 … 8 V
V
Q –– 480 –
TC
C ppm/K– 500 –
∆CT
CT
min. typ. max.
–
–
440
17.5
–
–
470
–
20
200
520
34
UnitValues
–15 – –
%––3
Semiconductor Group 2
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