Siemens BB439 Datasheet

BB 439

Silicon Variable Capacitance Diode BB 439

Preliminary Data

● For VHF tuned circuit applications

● High figure of merit

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BB 439 Q62702-B577white 2 SOD-323

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 28 V

Peak reverse voltage VRM 30
Forward current IF 20 mA
Operating temperature range T
Storage temperature range T

op – 55 … + 125 ˚C
stg – 55 … + 150

Thermal Resistance

Junction - ambient R

th JA ≤ 450 K/W

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

07.94

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BB 439

Parameter Symbol

Reverse current

R = 28 V

V

R = 28 V, TA = 60 ˚C

V

Diode capacitance, f = 1 MHz

R = 3 V

V

R = 25 V

V

Capacitance ratio, f = 1 MHz

R = 3 V, 25 V

V

Capacitance matching

R = 3 V … 25 V, f = 1 MHz

V

Series resistance

f= 100 MHz, C

T = 12 pF

Figure of merit

f = 50 MHz, V
f = 200 MHz, V

R = 3 V
R = 25 V

R nA

I

T pF

C

C

T3 / CT25 –5 – 6.5

∆CT / CT ––3

r

s – 0.35 0.5 Ω

Q –

min. typ.

–
–

26

4.3

–
–

–
–

–
–

280
600

UnitValues

max.

20
200

32
6

%

–
–

Diode capacitance CT = f (VR)

f= 1 MHz

Semiconductor Group 2