Siemens BAW79D, BAW79C, BAW79B, BAW79A Datasheet

Silicon Switching Diodes BAW 79 A

… BAW 79 D

● For high-speed switching

● High breakdown voltage

● Common cathode

Type Ordering Code

Marking

Pin Configuration

Package

1)

(tape and reel)

BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D

GE
GF
GG
GH

Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733

SOT-89

Maximum Ratings per Diode
Parameter Symbol Values Unit

BAW BAW BAWBAW

Reverse voltage V
Peak reverse voltage VRM 50

R 50 V

100
100

200
200

400

400
Forward current IF 1A
Peak forward current IFM 1
Surge forward current

µs

t= 1
Total power dissipation

S = 115 ˚C

T

I

FS 10

P

tot 1W

Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 175 K/W

Junction - soldering point Rth JS ≤ 35

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics per Diode

I

I
R

I
I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BAW 79 A

… BAW 79 D

UnitValuesParameter Symbol

min. typ. max.

(BR) = 100 µA

Forward voltage

F = 1 A
F = 2 A

R = VRmax

V

1)

VR = VRmax, TA = 150 ˚C

AC characteristics

R = 0 V, f = 1 MHz

V

F = 200 mA, IR = 200 mA,

L = 100 Ω

measured at I

R = 20 mA

BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D

(BR)

V

50
100
200
400

V

F

–
–

R

I

–
–

C

D –10–

–
–
–
–

–
–

–
–

–
–
–
–

1.6
2

1
50

trr –1–

VBreakdown voltage

V

µAReverse current

pFDiode capacitance

µsReverse recovery time

Test circuit for reverse recovery time

Pulse generator: t

1)

Pulse test: tp≤ 300 µs, D = 2 %.

p = 5 µs, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

≤ 1pF

C

Semiconductor Group 2