Siemens BAW78M Datasheet
BAW 78M
Semiconductor Group
Jul-27-19981
Silicon Switching Diode
Preliminary data
• Switching applications
• High breakdown voltage
VPW05980
1
2
3
5
4
Type Marking Ordering Code Pin Configuration Package
BAW 78M GDs Q62702-A3471 1 = A 2 = C 3 n.c. SCT-5954 n.c. 5 = C
Maximum Ratings
Parameter
Symbol Values Unit
Diode reverse voltage
V
R
400 V
Peak reverse voltage
V
RM
400
Forward current
I
F
1 A
Peak forward current
I
FM
1
Surge forward current, t = 1 µs
I
FS
10
Total power dissipation,
T
S
≤ 110 °C
P
tot
1 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 95
K/W
Junction - soldering point
R
thJS
≤ 40
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
BAW 78M
Semiconductor Group
Jul-27-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
400 - - V
Forward voltage
I
F
= 1 A
I
F
= 2 A
V
F
-
-
-
-
1.6
2
Reverse current
V
R
= 400 V
I
R
- - 1 µA
Reverse current
V
R
= 400 V,
T
A
= 150 °C
I
R
- - 50
AC characteristics
-
pF
C
D
10-Diode capacitance
V
R
= 0 V, f = 1 MHz
Reverse recovery time
I
F
= 200 mA,
I
R
= 200 mA,
R
L
= 100 Ω,
measured at
I
R
= 20mA
t
rr
- 1 - ns
Test circuit for reverse recovery time
EHN00020
Ι
F
DUT
90%
10%
R
Ι
V
R
tt
t
t
rr
pr
t
= 20 mA
F
Ι
Oscillograph
Pulse generator:
t
p
= 100ns, D = 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω,
t
r
= 0.35ns,
C ≤ 1pF
Semiconductor Group 2 1998-11-01
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