Siemens BAW101 Datasheet

Silicon Switching Diode Array BAW 101

● Electrically insulated high-voltage

medium-speed diodes

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAW 101 Q62702-A712JPs SOT-143

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 300 V

Peak reverse voltage VRM 300
Forward current IF 250 mA
Peak forward current IFM 500
Surge forward current, t= 1 µs IFS 4.5 A
Total power dissipation, T

S ≤ 35 ˚C Ptot 350 mW

Junction temperature Tj 150 ˚C

1)

Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 470 K/W

Junction - soldering point Rth JS ≤ 330

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BAW 101

UnitValuesParameter Symbol

min. typ. max.

(BR) = 100 µA

Forward voltage

F = 100 mA

Reverse current

R = 250 V

V

R = 250 V, TA = 150 ˚C

V

AC characteristics

R = 0, f = 1 MHz

V

F = 10 mA, IR = 10 mA, RL = 100 Ω

measured at I

R = 1 mA

Test circuit for reverse recovery time

V

(BR) 300 – –

V

F – – 1.3

R

I

–
–

C

D –6–

rr –1–

t

–
–

150
50

VBreakdown voltage

nA

µA

pFDiode capacitance

µsReverse recovery time

Pulse generator: t

p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

≤ 1pF

C

Semiconductor Group 2