Siemens BAV99W Datasheet
BAV 99W
Silicon Switching Diode Array
• Connected in series
• For high speed switching applications
Type Marking Ordering Code Pin Configuration Package
BAV 99W A7s Q62702-A1051 1=A1 2=C2 3=C1/A2 SOT-323
Maximum Ratings per Diode
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total Power dissipation
T
= 103 °C
S
Junction temperature
Storage temperature
Symbol Values Unit
V
R
V
RM
I
F
I
FS
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
1)
R
R
thJA
thJS
70 V
70
200 mA
4.5 A
250
150 °C
- 65 ... + 150
≤
430
≤
190
mW
K/W
Semiconductor Group 1 Apr-03-1997
BAV 99W
Electrical Characteristics
at
Parameter
DC characteristics per Diode
Breakdown voltage
I
= 100 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 50 mA
F
I
= 150 mA
F
Reverse current
V
= 70 V,
R
V
= 25 V,
R
V
= 70 V,
R
T
= 25 °C
A
T
= 150 °C
A
T
= 150 °C
A
T
=25°C, unless otherwise specified
A
Symbol Values Unit
min. typ. max.
V
(BR)
70 - -
V
F
-
-
-
-
I
R
-
-
-
V
mV
-
-
-
-
715
855
1000
1250
µA
-
-
-
2.5
30
50
AC characteristics per Diode
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 10 mA,
F
t
measured at 1 mA
rr
I
= 10 mA,
R
R
= 100
L
Ω
C
t
D
pF
- - 1.5
rr
ns
- - 6
Semiconductor Group 2 Apr-03-1997
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