Siemens BAV99S Datasheet
BAV 99S
Semiconductor Group
Apr-27-19981
Silicon Switching Diode Array
• For high-speed switching applications
• Connected in series
• Internal (galvanic) isolated Diodes
in one package
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code PackagePin Configuration
A7s Q62702-A1277 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363BAV 99S
Maximum Ratings
Parameter
ValueSymbol Unit
V
V
R
70Diode reverse voltage
Peak reverse voltage
V
RM
70
200 mAForward current
I
F
A
I
FS
Surge forward current, t = 1 µs 4.5
Total power dissipation,
T
S
= 85 °C
P
tot
250 mW
150 °CJunction temperature
T
j
Storage temperature
T
stg
65 ...+150
Thermal Resistance
K/W
Junction - ambient
1)
R
thJA
≤ 530
Junction - soldering point
R
thJS
≤ 260
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAV 99S
Semiconductor Group
Apr-27-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
ValuesSymbol Unit
max.typ.min.
DC characteristics
V
V
(BR)
Breakdown voltage
I
(BR)
= 100 µA
- -70
mVForward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
-
-
-
-
-
-
-
-
V
F
715
855
1000
1250
µAReverse current
V
R
= 70 V
I
R
2.5--
nAReverse current
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
I
R
-
-
-
-
30
50
AC characteristics
pF
Diode capacitance
V
R
= 0 V, f = 1 MHz
- 1.5-
C
D
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100 Ω,
measured at
I
R
= 1mA
t
rr
6 ns- -
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns, D = 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω,
t
r
= 0.35ns,
C ≤ 1pF
Semiconductor Group 2 1998-11-01
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