Siemens BAT15-099 Datasheet

Silicon Dual Schottky Diode BAT 15-099

Preliminary Data

Features

● DBS mixer application to 12 GHz

● Low noise figure

● Low barrier type

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code

Pin Configuration

Package

1)

(tape and reel)

BAT 15-099 S5 Q62702-A66 P-SOT-143-4-6

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 4V

Forward current IF 110 mA
Power dissipation, T

S ≤ 55 ˚C Ptot 100 mW

Storage temperature range Tstg – 55 … + 150 ˚C
Operating temperature range T

op – 55 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 1090 K/W

Junction - soldering point Rth JS ≤ 930

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group 1 01.97

Electrical Characteristics per Diode

I
I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BAT 15-099

Parameter Symbol

Breakdown voltage

R = 5 µA

Forward voltage

F = 1 mA
F = 10 mA

Forward voltage matching

F = 10 mA

Diode capacitance

R = 0, f = 1 MHz

V

Forward resistance

F = 10 mA/50 mA

V

(BR) V4––

F

V

∆V

F mV––20

C

T pF– – 0.35

R

F Ω– 5.5 –

min. typ.

–
–

0.23

0.32

UnitValues

max.

–
–

Semiconductor Group 2