Siemens BAT14-110D, BAT14-020D, BAT14-050D, BAT14-090D Datasheet
Silicon Schottky Diodes BAT 14- … D
● Beam lead technology
● Low dimension
● High performance
● Medium barrier
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering CodeMarking
Pin Configuration
Package
1)
BAT 14-020 D Q62702-D1259–D
BAT 14-050 D Q62702-D1268
BAT 14-090 D Q62702-D1276
BAT 14-110 D Q62702-D1285
Maximum Ratings
Parameter Symbol Unit
BAT 14-020 D
BAT 14-050 D
Reverse voltage VR 4V
Forward current I
F 100 mA
Values
BAT 14-090 D
BAT 14-110 D
4
50
Junction temperature Tj 175 ˚C
Storage temperature range
Operating temperature range T
stg – 65 … + 150
T
op – 65 … + 150
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BAT 14- ...D
BAT 14- … D
Parameter Symbol
DC Characteristics
V
(BR)
R = 10 µA
I
T
C
R = 0, f = 1 MHz BAT 14-020 D
V
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
F
V
F = 1 mA BAT 14-020 D
I
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
F = 10 mA BAT 14-020 D
I
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
min. typ. max.
4––
–
–
–
–
–
–
–
–
–
–
–
–
0.30
0.20
0.14
0.10
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
0.35
0.25
0.15
0.12
–
–
–
–
–
–
–
–
UnitValues
VBreakdown voltage
pFDiode capacitance
VForward voltage
IF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
F
f = 3.0 GHz BAT 14-020 D
f = 6.0 GHz BAT 14-050 D
f = 9.3 GHz BAT 14-090 D
f = 16 GHz BAT 14-110 D
F = 10 mA BAT 14-020 D
I
BAT 14-050 D
F = 50 mA BAT 14-090 D
I
BAT 14-110 D
SSB
F
–
–
–
–
6.0
6.5
6.5
7.0
–
–
–
–
rf
–
–
–
–
3.5
4.0
7.0
10.0
–
–
–
–
dBSingle sideband noise figure
ΩDifferential forward resistance
Semiconductor Group 2
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