Siemens BAT14-099R Datasheet

Silicon Crossover Ring Quad Schottky Diode BAT 14-099R

● Medium barrier diode for double balanced mixers,

phase detectors and modulators

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAT 14-099R Q62702-A0042S8 SOT-143

Maximum Ratings per Diode
Parameter Symbol Values Unit

Forward current I

F 90 mA

Power dissipation, TS ≤ 70 ˚C Ptot 100 mW
Storage temperature range T
Operating temperature range T

stg – 55 … + 150 ˚C
op – 55 … + 150

Thermal Resistance per Diode

1)

Junction – ambient

2)

Rth JA ≤ 1020 K/W

Junction – soldering point Rth JS ≤ 780

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.

Semiconductor Group 1

02.96

Electrical Characteristics per Diode

I

I
I

I

A = 25 ˚C, unless otherwise specified.

at T

BAT 14-099R

Parameter Symbol

Forward voltage

F = 1 mA
F = 10 mA

Forward voltage matching

F = 10 mA

Diode capacitance

R = 0, f= 1 MHz

V

Forward resistance

F = 10 mA / 50 mA

min. typ.

F V

V

–
–

1)

∆VF mV––20

C

T pF– 0.38 –

R

F Ω– 5.5 –

0.4

0.48

max.

–
–

Forward current IF = f (VF) Forward current IF = f (TS; TA*)

*Package mounted on alumina

UnitValues

1)

∆VF is the difference between the lowest and the highest VF in the component.

Semiconductor Group 2