Siemens BAT14-099R Datasheet

Silicon Crossover Ring Quad Schottky Diode BAT 14-099R
Medium barrier diode for double balanced mixers,
phase detectors and modulators
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code
Pin Configuration
Package
(tape and reel)
BAT 14-099R Q62702-A0042S8 SOT-143
Maximum Ratings per Diode Parameter Symbol Values Unit
Forward current I
F 90 mA
Power dissipation, TS 70 ˚C Ptot 100 mW Storage temperature range T Operating temperature range T
stg – 55 … + 150 ˚C op – 55 … + 150
Thermal Resistance per Diode
1)
Junction – ambient
2)
Rth JA 1020 K/W
Junction – soldering point Rth JS 780
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group 1
02.96
Electrical Characteristics per Diode
I
I I
I
A = 25 ˚C, unless otherwise specified.
at T
BAT 14-099R
Parameter Symbol
Forward voltage
F = 1 mA F = 10 mA
Forward voltage matching
F = 10 mA
Diode capacitance
R = 0, f= 1 MHz
V
Forward resistance
F = 10 mA / 50 mA
min. typ.
F V
V
– –
1)
VF mV––20
C
T pF 0.38
R
F 5.5
0.4
0.48
max.
– –
Forward current IF = f (VF) Forward current IF = f (TS; TA*)
*Package mounted on alumina
UnitValues
1)
VF is the difference between the lowest and the highest VF in the component.
Semiconductor Group 2
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