Siemens BAT14-099 Datasheet

Silicon Dual Schottky Diode BAT 14-099

● DBS mixer application to 12 GHz

● Low noise figure

● Medium barrier type

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

1)

(tape and reel)

BAT 14-099 Q62702-A3461S9 SOT-143

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage VR 4V
Forward current I

F 90 mA

Power dissipation, TS ≤ 55 ˚C Ptot 100 mW
Storage temperature range T
Operating temperature range T

stg – 55 … + 150 ˚C
op – 55 … + 150

Thermal Resistance

Junction – ambient

2)

Rth JA ≤ 1090 K/W

Junction – soldering point Rth JS ≤ 930

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.

Semiconductor Group 1

02.96

Electrical Characteristics per Diode

I

I
I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BAT 14-099

Parameter Symbol

Breakdown voltage

R = 5 µA

Forward voltage

F = 1 mA
F = 10 mA

Forward voltage matching

F = 10 mA

Diode capacitance

R = 0, f= 1 MHz

V

Forward resistance

F = 10 mA / 50 mA

V

BR V4––

F

V

∆VF mV––10

C

T pF– – 0.35

R

F Ω– 5.5 –

min. typ.

–
–

0.43

0.55

UnitValues

max.

–
–

Semiconductor Group 2