Siemens BA892 Datasheet
BA 892
Semiconductor Group
Au -03-19981
Silicon Rf Switching Diode
Preliminary data
• For VHF band switching
in TV / VTR tuners
• Low forward resistance,
small capacitance,
small inductance
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BA 892 A Q62702-A1214 1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage 35 V
V
R
Forward current mA
I
F
100
-55 ...+125 °COperating temperature range
T
op
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
K/W
Junction - ambient
1)
R
thJA
≤ 450
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BA 892
Semiconductor Group
Au -03-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Values UnitSymbol
min. max.typ.
DC characteristics
I
R
- - µAReverse current
V
R
= 20 V
20
V
F
- - 1 VForward voltage
I
F
= 100 mA
AC characteristics
pF
C
T
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
0.92
0.85
1.3
1.1
0.65
0.6
Ω
Forward resistance
I
F
= 3 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
-
-
0.45
0.36
r
f
0.7
0.5
kΩ
Reverse resistance
V
R
= 1 V, f = 100 MHz
1/
g
p
-100-
nHSeries inductance
L
s
- 0.6 -
Semiconductor Group 2 1998-11-01
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