Siemens BA885 Datasheet
BA 885
Silicon PIN Diode BA 885
● Current-controlled RF resistor
for switching and attenuating applications
● Frequency range 1 MHz … 2 GHz
● Especially useful as antenna switch
in TV-sat tuners
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BA 885 Q62702-A608PA SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 50 V
Forward current IF 50 mA
Operating temperature range T
Storage temperature range T
op – 55 … + 125 ˚C
stg – 55 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
1)
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group 1
07.94
Electrical Characteristics
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BA 885
Parameter Symbol
Forward voltage
F = 50 mA
Reverse current
R = 30 V
V
Diode capacitance
VR = 10 V, f = 1 MHz
R = 0 V, f = 100 MHz
V
Forward resistance
min. typ.
V
F V– – 1.1
I
R nA––50
T pF
C
–
–
0.28
0.23
rf Ω
max.
0.6
0.4
f = 100 MHz
F = 1.5 mA
F = 10 mA
Zero bias conductance
R = 0 V, f = 100 MHz
V
–
–
g
p µS–70–
22
5
40
7
Series inductance LS nH–2–
UnitValues
Diode capacitance CT = f (VR)
f = 1 MHz / 100 MHz
Forward resistance rf = f (IF)
f = 100 MHz
Semiconductor Group 2
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