Siemens BA586 Datasheet

BA 586

Silicon PIN Diode BA 586

Preliminary Data

● Current-controlled RF resistor for

switching and attenuating applications.

● Frequency range above 1 MHz

● Designed for low IM distortion

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BA 586 Q62702-A930white P SOD-123

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 50 V

Forward current IF 50 mA
Operating temperature range T
Storage temperature range T

op – 55 … + 125 ˚C
stg – 55 … + 150

Thermal Resistance

Junction - ambient R

th JA ≤ 450 K/W

1)

1)

For detailed information see chapter Package Outlines.

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BA 586

Parameter Symbol

Forward voltage

F = 50 mA

I

Reverse current

R = 50 V

V

Diode capacitance

f = 1 MHz, V

f= 100 MHz, V

R = 50 V

R = 0 V

Forward resistance

min. typ.

V

F V– – 1.15

I

R nA––50

T pF

C

–
–

r

f Ω

0.23

0.2

max.

0.35
–

f = 100 MHz

F = 10 µA

I

F = 1 mA

I

F = 10 mA

I

Zero bias conductance

f = 100 MHz, V

R = 0 V

g

p µS–40–

–
–

6.5

2400
58

7.8

–
–
10

Series inductance LS nH–2–

UnitValues

Diode capacitance CT = f (VR)

f = 1 MHz / f = 100 MHz

Forward resistance rf = f (IF)

f = 100 MHz