Siemens BA582 Datasheet
Silicon RF Switching Diode BA 582
● For low-loss VHF band switching
in TV/VTR tuners
Type Ordering CodeMarking
Pin Configuration
Package
BA 582 Q62702-A829blue S SOD-123
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 35 V
Forward current, TA ≤ 60 ˚C IF 100 mA
Operation temperature range T
Storage temperature range T
op – 55 … + 125 ˚C
stg – 55 … + 150
Thermal Resistance
Junction - ambient R
th JA ≤ 600 K/W
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
07.94
Electrical Characteristics
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BA 582
Parameter Symbol
min. typ.
V
Forward voltage
F = 100 mA
Reverse current
R = 20 V
V
Diode capacitance
F V––1
I
R nA––20
CT pF
f = 1 MHz
R = 1 V
V
R = 3 V
V
Forward resistance
–
0.6
rf Ω
0.92
0.85
f = 100 MHz
F = 3 mA
F = 10 mA
Reverse resistance
R = 1 V, f = 100 MHz
V
–
–
1/g
p kΩ– 100 –
0.45
0.38
Series inductance LS nH– 2.8 –
UnitValues
max.
1.4
1.1
0.7
0.5
Diode capacitance CT = f (VR)
f = 1 MHz
Forward resistance rf = f (IF)
f = 100 MHz
Semiconductor Group 2
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