Sharp PD481PI, PD49PI Datasheet
PD49PI/PD481PI
PD49PI/PD481PI
High Speed, High Sensitivity
Photodiode
■ Features
1. High sensitivity
>=3.5µA at E
(I
SC V
= 100lx:
PD481PI
)
2. Peak sensitivity wavelength matching
with infrared LED
(λp= 960nm: PD481PI
(λp= 1000nm: PD49PI
)
)
3. Built-in visible light cut-off filter
■ Applications
1. Infrared remote controllers for TVs,
VCRs, audio equipment and air condi tioners, etc.
R
(
Ta= 25˚C
32 V
-25 to+ 85
-40 to+ 100
260 ˚C
■ Absolute Maximum Ratings
Parameter
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*For 10 seconds at the position of 2.3mm from the bottom face of resin package
Symbol Rating Unit
V
P 150 mW
T
opr
T
stg
T
sol
■ Outline Dimensions
Detector
center
Black epoxy resin
(
Visible light cut-off type
)
7.3
0.9
Chip location
(
1.3
± 1.0
13.0
1.3
2.7±0.2
1.4
± 0.2
7.0
)
MAX.
0.5 0.5
5.08
1
)
˚C
˚C
± 0.1
2
MAX.
0.4
Rest of gate
± 0.2
7.6
0.9
MAX.
1.3
0.5
0.3
(
Unit : mm
1 Anode
2 Cathode
)
1
2
■ Electro-optical Characteristics
*2
Short circuit
current
*2
Short circuit current
PD49PI
PD481PI
temperature coefficient
Dark current
Dark current temperature
coefficient
Terminal capacitance
Parameter
Peak sensitivity
wavelength
*2 EV: Illuminance by CIE standard light source A (tungsten lamp
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
PD49PI
PD481PI
Symbol
I
SC
β
T
I
d
α
T
C
t
λ
P
Conditions
= 100lx
E
V
= 100lx
E
V
VR= 10V
= 10V
V
R
= 3V, f= 1MHz
V
R
)
-
MIN. TYP. MAX.
2.4 3 -
3.5 5 -
- 0.2 -
-130
-
3.5 5
-2050
1 000
--
910 960
1 010
(
Ta= 25˚C
Unit
µ A
%/˚C
nA
times/10˚C
pF
nm
)
PD49PI/PD481PI
Fig .1 Power Dissipation vs.
Ambient Temperature
200
)
150
mW
(
100
Power dissipation P
50
0
-25
0 25 50 75 100
Ambient temperature Ta (˚C
Fig. 3 Dark Current vs.
Ambient Temperature
-6
10
VR= 10V
-7
10
-8
)
10
A
(
d
-9
10
-10
10
Dark current I
-11
10
-12
10
0
-25
Ambient temperature Ta (˚C
25 50 75 100
Fig. 2 Spectral Sensitivity
100
90
80
)
70
%
(
60
PD49PlPD481Pl
50
40
30
Relative sensitivity
20
10
0
700 800 900
85
)
600
Wavelength λ (nm
T
a
1000 1100
)
= 25˚C
1200
Fig. 4 Dark Current vs. Reverse Voltage
-7
10
5
2
-8
10
)
5
A
(
d
2
-9
10
5
2
Dark current I
-10
10
5
2
-11
10
52
)
5 2 25 25
-2
10
5
-1
10
Reverse voltage V
Ta= 25˚C
1
R
(V
10
)
Reverse Voltage
60
50
)
pF
(
t
40
30
20
Terminal capacitance C
10
0
0.05 0.1 0.2 0.5
Reverse voltage V
1 2
(V
R
f =1MHz
T
10 20 50
5
)
= 25˚C
a
Fig. 6 Relative Output vs. Ambient TemperatureFig. 5 Terminal Capacitance vs.
(
Emitter : GL537/GL538,Detector : PD49PI/PD481PI
160
140
120
)
%
(
100
80
60
Relative output
40
Distance between infrared light emitting
20
diode and photodiode shall be fixed I
= 100µA at IF= 20mA and Ta= 25˚C
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
(
Test circuit
GL538
)
PD49PlGL537
PD481Pl
sc
)
)
A
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