Sharp PD480PI, PD480PI1 Datasheet
High Speed, Narrow
PD480PI/PD480PI1
Acceptance Photodiodes
PD480PI/PD480PI1
■ Features
1. High speed response (tr, tf: TYP. 100ns
at RL=1kΩ
2. Narrow acceptance (∆θ :TYP. ± 20˚
)
)
3. Compact
4. Lead forming type (PD480PI1
)
■ Applications
1. Game machines
2. Optoelectronic switches
3. Infrared remote controllers for TVs,
VCRs, audio equipment, air conditioners,
etc.
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Reverse voltage V
R
Power dissipation P 75 mW
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 3 seconds at the position of 2.5mm from the
surface of resin edge
opr
stg
sol
■ Electro-optical Characteristics
Parameter
*2
Short circuit current
Dark current I
Terminal capacitance
Peak sensitivity wavelength
Response time tr, t
Half intensity angle
*2 EV: Illuminance by CIE standard light source A (tungsten lamp
Symbol
I
SC
d
C
t
λ
p
f
∆θ
Conditions
E
= 100 lx
V
VR= 10V, EV=0
VR= 0, f= 1MHz
-
RL=1kΩ, VR= 10V
-
(
Ta = 25˚C
20 V
- 25 to + 85
- 40 to + 85
260 ˚C
(
MIN. TYP.
1.0 1.7 2.4 µ A
- - 10 nA
- 4.0 10 pF
950
100 250
-
±20
-
˚C
˚C
Ta= 25˚C
MAX.
)
Unit
-nm
ns
-
˚
)
■ Outline Dimensions
PD480PI
± 0.2
3.0
2- C0.5
MAX.
Rest of
gate
0.3
± 0.1
)
R0.8
PD480PI1
2-C0.5
gate
Rest of
± 0.1
R0.8
± 0.2
1.7
± 0.2
2.54
2.15
± 0.2
2.95
2.8
12
± 0.2
3.0
MAX.
0.3
1.7
2.54
± 0.2
1.6
2.15
2.95
2.8
12
1.6
1.5
MAX.
0.8
1.5
MAX.
0.8
Detector
center
± 0.2
4.0
+ 1.5
- 1.0
17.5
MIN.
MIN.
Detector
center
± 0.2
4.0
MIN.
15.5
MIN.
0.5
0.5
60 ˚
60 ˚
2-0.4
(
Unit: mm
1.15
0.75
Transparent epoxy resin
0.15
2- 0.4
1.15
0.75
Transparent epoxy resin
0.15
1.0
1
2
1 Anode
2 Cathode
1
2
1 Anode
2 Cathode
)
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PD480PI/PD480PI1
Fig. 1 Power Dissipation vs. Fig. 2 Spectral Sensitivity
Ambient Temperature
80
75
70
)
60
mW
(
50
40
30
Power dissipation P
20
10
0
-25
0 25 50 75 100
Ambient Temperature Ta (˚C
85
)
Fig. 3 Dark Current vs. Fig. 4 Dark Current vs. Reverse Voltage
Ambient Temperature
-6
10
5
V
=10V
R
-7
10
5
-8
)
10
A
(
5
d
-9
10
5
-10
10
Dark current I
5
-11
10
5
-12
10
-30
0
20 40 60 80 100
Ambient temperature Ta (˚C
)
100
Ta= 25˚C
90
80
)
70
%
(
60
50
40
30
Relative sensitivity
20
10
0
400 500 600 700 800 900
-8
10
-9
10
)
A
(
-10
d
10
-11
10
Dark current I
-12
10
-13
10
10-310
-2
Wavelength λ (nm
-1
10
1
Reverse voltage VR (V
1000 1100 1200
)
Ta= 25˚C
10 10
)
2
Fig. 5 Terminal Capacitance vs.
Reverse Voltage
6
5
)
pF
(
t
4
3
2
Terminal capacitance C
1
0
0.1 0.2 0.5 1
Reverse voltage VR (V
2 5
10
)
f =1MHz
T
= 25˚C
a
20 50 100
Fig. 6 Relative Output vs. Ambient Temperature
160
140
120
)
%
(
100
80
60
Relative output
40
Distance between infrared light
emitting diode and photodiode shall
20
be fixed when I
and T
= 25˚C.
0
- 25 0 25 50 75 100
a
Ambient temperature Ta (˚C
GL480 PD480Pl
=25µA at IF= 20mA
sc
)
A
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