Sharp PD412PI Datasheet
PD412PI
PD412PI
Compact Package Type
Photodiode with Condensing Lens
■
Features
1. High sensitivity
(TYP. 0.5A/W at λ
= 780nm)
p
2. High speed response
■
Applications
1. Optoelectronic switches
2. MD (mini disk) laser power monitors
■
Outline Dimensions
±
0.2
0.8
MAX. 0.4
Rest of gate
+0.2
- 0.1
1
4.0
2.4
2.54
❈
8˚8˚
8˚8˚
Detector center
2-0.45
±
0.1
R1.75
)
2.5
(
± 0.2
5.0
2.15
1.5-1.0
+
2-0.4
17.15
0.2
MIN. 0.5
±
3.75
*Tolerance : ± 0.15
2
* ( ) : Reference dimensions
❈ Dimension at lead root
(Unit : mm)
±
0.2
2.0
0.5
1.5
8˚
8˚
+ 0.2
- 0.1
8˚
Transparent epoxy resin
8˚
1
2
1 Anode
2 Cathode
Absolute Maximum Ratings
■
Parameter Symbol Rating Unit
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
V
R
P 150 mW
-25to+85
T
opr
- 40 to +100
T
stg
T
sol
(Ta=25˚C)
32 V
260 ˚C
2.15mm
˚C
˚C
Soldering area
PD412PI
■
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Shortcircuit current
Shortcircuit current temperature coefficient
Dark current
Dark current temperature coefficient
Terminal capacitance
Peak sensitivity wavelength
Peak spectral sensitivity
Response time
Rise Time
Fall Time
Half intensity angle
*2 EV : Illuminance by CIE standard light source A (tungsten lamp)
(Ta=25 ˚C)
Isc 3.5 4.7 6.3 µ A
β
I
α
C
λ
K - 0.5 - A/W
t
t
∆θ
*2
= 100 lx
E
V
*2
= 100 lx
T
d
T
t
p
E
V
VR= 10V, Ee= 0 - 0.5 10 nA
VR= 10V, Ee= 0 - 3.5 5.0
VR= 3V, f= 1MH
Z
- 0.2 - %/˚C
times/10˚C
- 100 350
- 800 - nm
l = 780nm
250
=1kΩ
r
f
R
L
VR= 10V
-
- 250 -
-
- ± 45 -
pF
ns
˚
Fig. 1 Power Dissipation vs. Ambient
Temperature
200
150
100
50
Power dissipation P (mW)
0
-25
0 25 50 75 10085
Ambient temperature Ta (˚C
)
Fig. 2 Shortcircuit Current vs. Illuminance
1000
100
)
µA
(
SC
10
1
0.1
Shortcircuit current I
0.01
110
100
Illuminance EV (lx
1000
)
Ta=25˚C
10000
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