Sharp PD410PI Datasheet
PD410PI
PD410PI
High Speed Photodiode
■ Features
1. Peak sensitivity wavelength matching
with infrared LED (λ p= 1 000nm
)
2. Built-in visible light cut-off filter
■ Applications
1. Infrared remote controllers for TVs,
VCRs, audio equipment and air condi tioners, etc.
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Reverse voltage V
Power dissipation P 150 mW
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 5 seconds at the position of 2.15mm from the bottom face of resin package
R
opr
stg
sol
- 25 to + 85
- 40 to + 100
(
Ta= 25˚C
32 V
260 ˚C
■ Outline Dimensions
± 0.2
Detector
center
4.0
2.4
0.4MAX.
Rest of gate
0.8
0.45
2.54
8˚ 8˚
12
2.15
MIN.
0.5
)
˚C
˚C
R1.75
2.5
± 0.2
3.75
± 0.2
5.0
+1.5
- 1.0
17.15
1 Anode
2 Cathode
(
Unit : mm
2.0 ±0.2
1.5
8˚
8˚
0.4
1
2
)
0.5
)
Visible light cut-off type
Black epoxy resin
(
(
■ Electro-optical Characteristics
SC
T
d
T
t
p
, t
f
Conditions
= 100 lx
E
V
= 100 lx
E
V
VR= 10V, EV=0
= 10V, EV=0
V
R
VR= 3V, f= 1MHz
λ = 1000nm
-
RL=1kΩ, VR= 10V
Parameter Symbol
Shortcircuit current I
Short-circuit current temperature coefficient
β
Dark current I
Dark current temperature coefficient
α
Terminal capacitance C
Peak sensitivity wavelength λ
Peak spectral sensitivity K 1 - A/W
Half intensity angle ∆θ - ± 45 Response time t
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
r
MIN. TYP. MAX. Unit
2.5 3.0 4.5 µA
- 0.2 - %/˚C
- 0.5 10 nA
- 3.5 5.0
20 35 pF
-
1000 - nm
--
-
- 200 - ns
Ta=25˚C
)
times/10˚C
˚
PD410PI
Fig. 1 Power Dissipation vs.
Ambient Temperature
200
)
150
mW
(
100
Power dissipation P
50
0
-25
0 25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 3 Dark Current vs.
Ambient Temperature
-6
10
V
= 10V
R
-7
10
)
-8
10
A
(
d
-9
10
-10
Dark current I
10
-11
10
-12
10
-25
0
25 50 75 100
Ambient temperature T
a
(˚C)
Fig. 5 Terminal Capacitance vs.
Reverse Voltage
60
50
)
pF
(
t
40
30
20
Terminal capacitance C
10
0
0.05 0.1 0.2
0.5
1 2
Reverse voltage VR (V
5
85
f =1MHz
T
= 25˚C
a
10 20 50
)
Fig. 2 Spectral Sensitivity
100
90
80
70
60
50
40
30
Relative sensitivity(%)
20
10
0
600 700 800 900
Wavelength λ (nm
Ta= 25˚C
1000 1100 1200
)
Fig. 4 Dark Current vs. Reverse Voltage
-7
10
5
2
-8
10
5
(A)
2
d
-9
10
5
2
Dark current I
-10
10
5
2
-11
10
-2
525252525
10
Fig. 6 Relative Output vs. Ambient Temperature
160
140
120
)
%
(
100
-1
10
Reverse voltage VR (V
110
(
Emitter : GL537 /
Detector:PD410PI
(
Test circuit
GL537
GL538
80
60
Relative output
40
Distance between infrared light
emitting diode and photodiode
20
shall be fixed when I
= 20mA and Ta= 25˚C.
0
- 25 0 25 50 75 100
= 100µ A at I
SC
Ambient temperature Ta (˚C
)
)
)
= 25˚C
T
a
GL538
PD410Pl
)
)
A
F
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