Sharp PC355NT Datasheet

PC355NT
PC355NT
Mini-Flat Package, High Sensitivity Photocoupler
Features
1. High current transfer ratio (CTR : MIN. 600% at IF= 1mA, VCE=2V
2. Opaque type, mini-flat package PC355NT (1-channel
)
3. Subminirature type (The volume is smaller than that of our conventional DIP type by as far as 30%
)
5. Recognized by UL (NO. E64380
•••Viso: 3 750V
rms
)
Package Specifications
Model No. Taping specifications
PC355NT
Taping reel diameter 178mm (750pcs.
Applications
1. Hybrid substrates that require high density mounting.
2. Programmable controllers
± 0.3
+ 0.2
- 0.7
34
(
Unit : mm
1 Anode 2 Cathode 3 Emitter 4 Collector
± 0.05
0.2
+ 0.4
0.5
- 0.2
Outline Dimensions
PC355NT
)
)
2.54
Anode mark
3.6
± 0.25
34
355
21
± 0.3
6˚
0.4
± 0.1
Internal connection diagram
± 0.2
4.4
12
C0.4
Input side
± 0.2
2.6
± 0.1
0.1
5.3
7.0
)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
PC355NT
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Forward current I
*1
Input
Peak forward current I Reverse voltage V Power dissipation P 70 mW Collector-emitter voltage V
Output
Emitter-collector voltage 6 V Collector current I Collector power dissipation P Total power dissipation 170 mW
*2
Isolation voltage V Operating temperature ˚C Storage temperature ˚C
*3
Soldering temperature 260 ˚C
*1 Pulse width<=100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute *3 For 10 senconds
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage V
Input
Output
Transfer­charac­teristics
Reverse current Terminal capacitance C Collector dark current I Collector-emitter breakdown voltage Emitter-collector breakdown voltage Current transfer ratio CTR I Collector-emitter saturation voltage Isolation resistance R Floating capacitance C
Response time
Rise time t
Fall time - 53 250 µ s
BV BV
V
(
Ta = 25˚C
F
FM
R
CEO
V
ECO
C
C
P
tot
iso
T
opr
T
stg
T
sol
= 20mA - 1.2 1.4 V
FIF
VR=4V - - 10 µA
I
R
V= 0, f= 1kHz
t
VCE= 10V, IF=0 - - A
CEO
= 0.1mA, IF= 0 35 - - V
CEOIC
=10µA, IF=0 6 - - V
ECOIE
= 1mA, VCE= 2V 600 %
F
)
IF= 20mA, IC= 1mA - 0.8 1.0 V
CE(sat
DC500V, 40 to 60%RH
ISO
V= 0, f= 1MHz - 0.6 1.0 pF
f
VCE= 2V, IC= 2mA
r
R
L
= 100
t
f
50 mA
1A 6V
35 V
80 mA
150 mW
3 750
- 30 to + 100
- 40 to + 125
)
Soldering area
V
rms
- 30 250 pF
1 600 7 500
5x101010
- 60 300 µ s
11
(
Ta= 25˚C
-6
10
-
0.2mm or more
)
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