Sharp PC353T Datasheet

PC353T

PC353T

Mini-flat Package
Photocoupler with Base
Terminal

■ Features

1. With base terminal

2. Applicable to infrared ray reflow
(230˚C, MAX. 30 seconds

)

3. High isolation voltage
(V

: 3 750V

iso rms

)

4. Recognized by UL (No. E64380)

5. Mini-flat package

■ Applications

1. Hybrid substrates that reguire high denity
mounting

2. Programmable controllers

■ Package Specifications

Model No. Taping specifications

PC353T

Taping reel diameter

178mm (750pcs.

)

■ Absolute Maximum Ratings

Parameter Symbol Rating Unit

Forward current

*1

Input

Output

Peak forward current
Reverse voltage V
Power dissipation
Collector-emitter voltage V
Emitter-collector voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Collector power dissipation
Total power dissipation

*2

Isolation voltage
Operating temperature T
Storage temperature T

*3

Soldering temperature

■ Outline Dimensions

± 0.25

1.27

654

353

13

3.6

± 0.2

2.6

± 0.1

0.1

(

I

F

I

FM

R

P70mW

CEO

ECO

CBO

EBO

C

P

C

P

tot

V

iso

opr

stg

T

sol

50 mA

1A
6V

80 V

6V

80 V

6V

50 mA
150 mW
170 mW

3.75 kV

- 30 to + 100 ˚C

- 40 to + 125 ˚C
260 ˚C

± 0.2

4.4

± 0.1

0.4

± 0.3

6˚

Ta= 25˚C

rms

C0.4

(

Input side

+ 0.4

0.5

- 0.2

)

(

Internal connection
diagram

65 4

13

1 Anode
3 Cathode

± 0.3

5.3

)

+ 0.2

7.0

- 0.7

Soldering area

Unit : mm

4 Emitter
5 Collector
6 Base

0.2mm or more

)

± 0.05

0.2

*1 Pulse width <=100µs, Duty ratio : 0.001
*2 AC for 1 min., 40 to 60%RH, f= 60H
*3 For 10 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”

z

PC353T

■ Electro-optical Characteristics

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Forward voltage V

Input

Output

Transfer
charac­teristics

Reverse current I
Terminal capacitance C
Collector dark current
Collector-emitter

breakdown voltage
Emitter-collector I

breakdown voltage
Collector-base

breakdown voltage
Collector current I
Collector-emitter

saturation voltage
Isolation resistance
Floating capacitance C

Response time

Rise time t
Fall time t

V

BV

BV

BV

I

CEO

CE(sat

R

(

Ta= 25˚C

F

R

t

IF= 20mA - 1.2 1.4 V
VR=4V - - 10 µA
V= 0, f = 1kHz

- 30 250 pF

)

VCE= 20V, IF= 0 - - 100 nA

= 0.1mA

I

CEO

ECO

CBO

C

)

ISO

f

r

f

C

=0

I

F

=10µA

E

=0

I

F

= 0.1mA

I

C

=0

I

F

IF= 5mA

=5V

V

CE

= 20mA

I

F

= 1mA

I

C

DC500V
40 to 60%RH

V= 0, f = 1MH
V

= 2V, IC= 2mA

CE

= 100 Ω

R

L

Z

80 - - V

6--V

80 - - V

2.5 - 30 mA

- 0.1 0.2 V

10

11

5x10

10

- Ω

- 0.6 1.0 pF

-418µs

-318µs

Fig. 1 Forward Current vs.

Ambient Temperature

50

)

40

mA

(

F

30

20

Forward current I

10

0

0 25 1007555

-30
Ambient temperature T

Fig. 2 Diode Power Dissipation vs.

Ambient Temperature

100

)

80

mW

(

70
60

40

20

Diode power dissipation P

0

-30

(˚C)

a

Ambient temperature T

55 75 100250

(˚C)

a