LH538700A
CMOS 8 M (1M × 8) MROM
FEATURES
•• 1,048,5 76 w ords × 8 bi t organ izatio n
•• Access time: 100 ns (MAX.)
•• Power consu mption :
Operating : 55 0 mW (MAX.)
Standb y: 550 µW (MAX.)
•• Static operation
•• TTL compatible I/O
•• Three-state outputs
•• Singl e +5 V p owe r su ppl y
•• Packa ges:
32-pi n , 600 -mil DIP
32-pi n , 525 -mil S OP
32-pin, 400-mil TSOP (Type II)
DESCRIPTION
The LH538700A is an 8M-bit mask-programmable
ROM organize d a s 1,048,576 × 8 bits. It is fabricated
using sili con-gate CMOS process technology.
PIN CONNECTIONS
538700A-1
TOP VIEW
1
2
3
4
5
6
9
10A
2
A
5
V
CC
28
27
26
25
24
23
20
17
A
7
A
6
7
8
A
3
A
4
22
21
A
15
A
12
GND
A
13
A
8
A
11
A
10
CE
D
7
D
6
D
3
11
12
13
32
31
30
29 A
14
A
1
14
15
16
19 D
5
18 D
4
D
1
D
2
A
0
D
0
A
9
A
16
OE
32-PIN DIP
32-PIN SOP
A
19
A
18
A
17
Figure 1. Pin Connections for DI P and
SOP Packages
538700A-2
TOP VIEW
2
3
4
5
8
9
A
4
A
7
29
28
27
26
25
24
21
18
A
15
A
12
6
7
23
22
A
14
D
4
10
11
12
31
30
A
2
13 20
19
A
3
32-PIN TSOP (Type II)
14
15
16 17 D
3
321
A
16
CE
A
18
A
13
A
9
A
11
OE
A
10
A
8
D
7
D
6
D
5
A
19
A
1
A
0
D
0
D
1
D
2
GND
NOTE: Reverse bend available on request.
A
6
A
5
V
CC
A
17
Figure 2. Pin Connections for TSOP Package
538700A-3
A
3
A
2
A
1
A
12
A
11
A
10
A
9
A
8
32
4
25
23
26
6
9
10
11
A
7
A
6
V
CC
A
4
18
19
20
13
21
D
0
MEMORY
MATRIX
(1,048,576 x 8)
SENSE AMPLIFIER
OUTPUT BUFFER
16
5
GND
D
1D2D3D4
D
5
D6D
7
17
14
15
8
27
A
5
7
A
13
28
ADDRESS BUFFER
CE
A
0
12
ADDRESS DECODER
COLUMN SELECTOR
CE
BUFFER
OE
BUFFER
A
14
29
A
15
3
22
TIMING
GENERATOR
A
16
2
24
OE
A
17
30
A
18
31
A
19
1
Figure 3. LH538700A Block Diagram
PIN DESCRIPTION
SIGNAL PIN NAME
A0 – A
19
Addr ess in put
D
0
– D
7
Data ou tpu t
CE Chip en abl e i npu t
SIGNAL PIN NAME
OE Output ena ble in put
V
CC
Power supply (+5 V)
GND Ground
LH538700A PREL IMINARY CMOS 8M MROM
2