Sharp GL610T Datasheet

GL610T
GL610T
Ultra-compact Chip Part Type Infrared Emitting Diodes
Features
1. Ultra-compact type (1.6 x0.8 x 0.8 mm)
2. Thin type (thickness : 0.8 mm)
3. Taped-packed type (4,000 pieces/reel)
4. Leadless type
Applications
1. Compact and thin remote controllers
2. Tape end detection of VCRs and VCR cameras
3. Power source for car navigator touch panels
4. Other portable equipment
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Forward current
*1
Peak forward current Reverse voltage
I
V Power dissipation Operating temperature Storage temperature
*2
Soldering temperature
*1 Pulse width <= 100µ s, Duty ratio=0.01 *2 Hand soldering temperature, for MAX. 3 seconds
T
T
I
F
FM
R
PmW
opr
stg
sol
50 mA
500 mA
6
150
-25to+85
- 25 to + 100 260 ˚C
(Ta=25˚C)
V
˚C ˚C
Outline Dimensions
1.6
(0.2)
0.8
1
1.2
1.0
0.5
0.3
(0.3)
2
Chip position
(0.3)
Chip side mark
(Unit : mm)
0.8
0.3
* Plating area * Terminal connection
1 Anode 2 Cathode
12
* Tolerance : ± 0.1mm
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage
*1
Peak forward voltage Reverse current Radiant flux Peak emission wavelength
Half intensity wavelength Response frequency
Half intensity angle
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
V
V
I
Φ
λ
∆λ
f
∆θ
F
FM
R
e
p
c
I
= 50mA
F
IFM= 0.5A
=3V
V
R
= 20mA
I
F
I
= 20mA
F
I
= 20mA -
F
-
IF= 20mA
1.3
-V
2.2
-V
--10µA
0.7
2.0
- 950 - nm 40
300
-
--˚
±60
(Ta=25 ˚C)
1.5
3.5
-
mW
-nm
-
kH
Z
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