Sharp GL551, GL550 Datasheet

GL550/GL551

GL550/GL551

High Speed Infrared Emitting
Diode

■

Features

1. High speed response
Response frequency fc : TYP. 12MHz

2. Intermediate beam angle and narrow beam angle

GL550 half intensity angle : TYP. ± 22˚
GL551 half intensity angle : TYP. ± 10˚

3. High output type optical output : TYP. 15mW

■

Applications

1. Audio equipment

2. AV equipment

■

Outline Dimensions

± 0.2

Transparent
epoxy resin

φ 5.0

MAX.

1.5

Protruded resin

± 0.1

0.8

± 0.1

0.5

2

1

± 0.1

0.5

GL550
GL551

* ( ) : Reference dimensions

± 0.2

7.4

* 1

± 1.5

2.0

(

)

2.54

± 0.2

φ 5.0

* 1 Dim. (mm) * 2 Dim. (mm)

31.5± 2
33± 2

)

1.0

(

plating

Without

(Unit : mm)

1

* 2

2

1 Anode
2 Cathode

(

)

2.5

(

)

4.3

■

Absolute Maximum Ratings

(Ta=25˚C)

Parameter Symbol Rating Unit

Forward current

*1

Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature

*2

Soldering temperature

*1 Pulse width 100µ s, Duty ratio=0.01
*2 For MAX. 3 seconds at the position of 3.0 mm from the resin edge

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

I

F

I

FM

V

P 190 mW

T

opr

T

stg

T

sol

R

100 mA

1A
4V

-20to+85

- 30 to + 100
260 ˚C

˚C
˚C

GL550/GL551

Electro-optical Characteristics

■

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Forward voltage

V
Peak forward voltage
Reverse current
Terminal capacitance
Radiant flux
Peak emission wavelength

Half intensity wavelength

Half intensity angle

GL550
GL551

Response frequency

*3 Frequency to bring about -3dB reduction of modulated radiant flux from 100Hz

I
C

Φ

λ

∆λ

∆θ

*3

(Ta=25 ˚C)

F

FM

R

t

e

p

f

c

IF= 50mA
IFM= 0.5A
VR=3V
V

= 0, f =1MH

R

IF= 50mA

= 50mA

I

F

I

= 50mA

F

I

= 50mA

F

I

= 50mA +10mA

F

Z

p-p

- 1.5 V

--V

--10µA

-70-

10 - mW

850

880 nm

-40-nm

- ± 22 -

-±10- ˚

-12-MH

1.75

3.5 V

pF

22

900

˚

Z

Fig. 1 Forward Current vs. Ambient

Temperature

120

100

)
mA

80

(

F

60

40

Forward current I

20

0

- 40 - 20 0 20 40 60 80 100

Ambient temperature Ta (˚C

25 85

Fig. 2 Peak Forward Current vs. Duty Ratio

-2

10

Duty ratio

Pulse width<=100 µs
Ta= 25˚C

-1

10

110

5000

)
mA

(

1000

FM

500

100

50

Peak forward current I

10

-4

)

-3

10