Sharp GL538, GL537 Datasheet

GL537/GL538
GL537/GL538
φ 5mm Resin Mold Type Infrared
Emitting Diode
Features
1. High output power IE: TYP. 30mW/sr at IF= 50mA
(
GL538
)
2. Beam angle
GL538 ∆θ : TYP. ± 13˚ GL537 ∆θ : TYP. ± 25˚
3. φ 5mm epoxy resin package
1. Infrared remote controllers for TVs,
VCRs, audio equipment and air condi-
tioners
Absolute Maximum Ratings
(
Ta= 25˚C
Parameter Symbol Rating Unit Power dissipation Forward current
*1
Peak forward current I Reverse voltage Operating temperature Storage temperature
*2
Soldering temperature
*1 Pulse width<=100 µ s, Duty ratio= 0.01 *2 For 3 seconds at the position of 2.6mm from the bottom face of resin package.
P 150 mW
R
stg
sol
100 mA
1A 6V
- 25 to + 85
- 40 to + 85 260 ˚C
I
F
FM
V
T
opr
T T
)
˚C ˚C
Outline Dimensions
φ 5
MAX.
Protruded resin 1.5
Cutting type
GL538
0.5
0.5
(
2.54
0.8
2
1
(
Unit : mm
Blue transparent epoxy resin
*
1
0.8
± 1.0
23.5
)
MIN.
0.3
± 0.2
GL537
5.8
φ
GL538
2
1
Anode
2
Cathode
*
Portion dimension (mm
7.7
8.4
)
)
± 0.2
± 0.2
Electro-optical Characteristics
Parameter Conditions MIN. TYP. MAX. Unit Forward voltage - 1.3 1.5 V Peak forward voltage - V Reverse current - - 10 µ A Peak emission wavelength - 950 - nm Half intensity wavelength - 45 - nm
*3
Radiation intensity
GL537 13 - GL538 15 30 -
Terminal capacitance - 50 pF Response frequency -- 300 - kHz
Half intensity angle
: Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr
*3 I
E
in the direction of mechanical axis of the lens portion into 1 sr of all those emitted from the light emitting diode.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
GL537 - ± 25 ­GL538 - ± 13 -
Symbol
V
F
V
FM
I
R
λ
P
∆λ
I
E
C
t
f
c
∆θ
= 50mA
I
F
= 0.5A
I
FM
V
=3V
R
= 5mA
I
F
= 5mA
I
F
I
= 50mA
F
= 0, f= 1kHz
V
R
IF= 20mA
(
steradian
1.9 3.0
6
)
(
Ta= 25˚C
-
)
mW/sr
˚ ˚
GL537/GL538
Fig. 1 Forward Current vs.
Ambient Temperature
120
100
) mA
80
(
F
60
40
Forward current I
20
0
- 25 0 25 10050 75 85 Ambient temperature Ta (˚C
Fig. 3 Spectral Distribution
100
)
80
%
(
60
40
)
IF= 5mA T
= 25˚C
a
Fig. 2 Peak Forward Current vs. Duty Ratio
10000
) mA
(
1000
FM
100
Peak forward current I
10
-3
10
10
-2
Duty ratio
Pulse width<=100 µs
T
= 25˚C
a
-1
10
1
Fig. 4 Peak Emission Wave length vs.
Ambient Temperature
) nm
(
1000
975
950
IF= const.
Relative radiant intensity
20
0 880 920 960
Wavelength λ (nm
)
108010401000
Fig. 5 Forward Current vs. Forward Voltage
500
200
100
) mA
(
50
F
20
10
5
Forward current I
2 1
0
Ta =75˚C
50˚C
0.5 1 1.5 2 2.5 Forward voltage V
25˚C
0˚C
- 25˚C
3
)
(V
F
925
Peak emission wavelength λp
900
- 25 0 25 50 75 100 Ambient temperature Ta (˚C
Fig. 6 Relative Forward Voltage vs.
Ambient Temperature
140
)
120
%
(
100
80
Relative forward voltage
60
40
- 25 0 25 50 75 100
Ambient temperature T
a
I
F
(˚C
= const.
)
)
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