Sharp GL496 Datasheet
GL496
GL496
High Speed Infrared Emitting Diode
■
Features
1. High speed response (response frequency : 40MHz)
2. Peak emission wavelength λ p : TYP. 880 mm
3. Half intensity angle ∆θ : ± 22˚
4. Lead bending type may be used.
Applications
■
1. AV equipment
2. Personal computers
3. Portable information terminal equipment
■
Outline Dimensions
3.0
2-C0.5
R-1.25
(1.7)
1
(2.54)
1
1.5
1.4
0.45
2
1.55
4.0
17.5
MIN0.5
2.8
2
Transparent epoxy resin
1.15
0.4
1 Anode
2 Cathode
(Unit : mm)
■
Absolute Maximum Ratings
(Ta=25˚C)
Parameter Symbol Rating Unit
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
*1 Pulse width 100µ s, Duty ratio=0.01
*2 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
F
I
FM
V
R
PmW
T
opr
T
stg
T
sol
50
0.5
4V
87.5
-25to+85
-40to+90
260 ˚C
mA
A
˚C
˚C
GL496
■
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage
Peak forward voltage
Reverse current
*3
Radiant intensity
Radiant flux
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
*4
Response frequency
Half intensity angle
*3 Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of the lens portion
into 1 sr or all those emitted from the light emitting diode.
*4 Frequency to bring about -3dB reduction of modulated radiant intensity from 100kHz
V
F
FM
I
R
I
E
Φ IF= 50mA
E
λ
p
∆λ
Ct
fc
∆
θ
IF= 50mA
IFM= 0.5A
VR=3V
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
VR= 0V,f =1MHz
I
= 50mA +10mAp-p
F
I
= 50mA
F
-V
1.55
-V
2.6
1.75
3.6
--10µA
10.0
3.0
-
12
850
880 nm
--nm
--
--
--
±22
900
50
60
40
(Ta=25 ˚C)
-
mW/sr
-
V
mW
pF
MHz
˚
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
)
40
mA
(
F
30
20
Forward current I
10
0
- 40 - 20 0 20 40 60 80 100
Ambient temperature Ta (˚C
25
)
Fig. 2 Peak Forward Current vs. Duty Ratio
-2
10
Duty ratio
Pulse width<=100 µs
Ta= 25˚C
-1
10
110
5000
)
mA
(
1000
FM
500
100
50
Peak forward current I
10
85
-4
-3
10
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