Sharp GL4910 Datasheet

GL4910

GL4910

Side View Type Infrared Emitting
Diode for Camera AF
(Automatic Focusing)

± 0.2

2 - 0.4

(Unit : mm)

0.5

8˚8˚

8˚

+ 0.2

1 Cathode
2 Anode

Pink
transparent
epoxy resin

1

- 0.1

2

■■

Features

1. Small spot light diameter for easy beam diaphragming

(*Apparent emission diameter : TYP. φ 0.32 mm)

2. Uniform emission intensity on chip emitting surface

3. Low peak forward voltage type
(Peak forward voltage V

*Expansion range on lens surface of infrared emitted from chips

Applications

■

: TYP. 1.7V

FM

1. Cameras

)

Outline Dimensions

± 0.2

4.0

0.8

MAX.

Gate burrSolder dipping

0.8

0.4

0.8

range

+ 0.2

2 - 0.45

- 0.1

1

8˚

8˚

2.54

0.8

2- 0.28

2- 0.77

2

8˚

8˚

Chip center

)

2.5

(

2.15

MIN.

± 0.1

R1.75

± 0.2

5.0

(Chip position
: 2.65)

- 1.0

+ 1.5

17.15

0.3

± 0.2

3.75

* ( ) : Reference dimensions
* Tolerance : ± 0.15 mm

2.0

1.5

8˚

Absolute Maximum Ratings

■

Parameter Symbol Rating Unit

Forward current

*1

Peak forward current
Reverse voltage
Operating temperature
Storage temperature

*2

Soldering temperature

*1 30,00 cycles max. on pulse conditions shown in the right drawing
*2 For 5 seconds at the position of 2.15 mm from the resin edge

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

I

F

I

FM

V

T

opr

T

stg

T

sol

R

-25to+60

-40to+85

(Ta=25˚C)

50 mA

1

A

4V

˚C
˚C

260 ˚C

120 µs

FM

I

500 µs

32ms (64 pulses)

1s (1 cycle)

Soldering area

2.15mm

GL4910

Electro-optical Characteristics

■

Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage
Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Half intensity angle
Terminal capacitance

*3 Emission output to effective angle± 25˚

V

V

*3

∆λ
∆θ

(Ta=25 ˚C)

IF= 50mA

F

= 300mA, t= 10ms

I

FM

I

R

Φ

λ

C

FM

=1V

V

R

IFM= 300mA, t= 10ms

e

= 50mA

I

p

F

= 50mA

I

F

= 50mA

I

F

= 0, f= 1MH

V

t

R

Z

-

1.55

1.7 V

- 1.7 1.95 V

-- µA

4.2
850

--nm

100

9

-mW

-35-nm

- ±32 ­80

-

-

˚

pF

Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Peak Forward Current vs. Duty Ratio

60

50

)
mA

40

(

F

30

20

Forward current I

10

0

- 25 0 25 50 75 100 125

60

Ambient temperature Ta (˚C

)

1000

mA

(

FM

100

10

Peak forward current I

1

-4

-3

10

)

Pulse width<= 100µs
Ta= 25˚C

-2

10

Duty ratio

-1

10

110