Sharp GL483Q, GL480Q, GL480 Datasheet
GL480/GL480Q/GL483Q
GL480/GL480Q
GL483Q
■ Features
1. Narrow beam angle (∆θ : TYP. ± 13˚
2. Radiant flux (Φ e : MIN. 0.7mW at
IF= 20mA
)
3. Compact, high reliability by chip coating
(GL480Q/GL483Q
4. Long lead type (GL483Q
)
)
■ Applications
1. Copiers
2. Floppy disk drives
3. Optoelectronic switches
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Power dissipation P 75 mW
Forward current I
*1
Peak forward current I
Reverse voltage V
Operating temperature T
Storage temperature T
*2
Soldering temperature T
*1 Pulse width<=100µ s, Duty ratio = 0.01
*2 For 3 seconds at the position of 1.4mm from the bottom face of resin package.
F
FM
R
opr
stg
sol
)
(
Ta= 25˚C
50 mA
1A
6V
- 25 to + 85
- 40 to + 85
260 ˚C
˚C
˚C
)
Infrared Emitting Diode
■ Outline Dimensions
GL480/GL480Q
2- C0.5
MAX.
0.3
gate
Rest of
± 0.1
R0.8
± 0.2
2.95
GL483Q
2- C0.5
MAX.
0.3
gate
Rest of
± 0.2
1.6
2- 0.6
± 0.2
2.95
1
± 0.2
1
± 0.2
2.15
3.0
2.15
3.0
1.7
2.54
2.8
1.7
2.54
2.8
± 0.2
± 0.2
1.6
1.6
1.5
MAX.
0.8
MIN.
0.5
2
1.5
MAX.
0.8
MIN.
0.5
2
+ 1.5
1.15
0.75
Emitter center
4.0± 0.2
60˚
- 1.0
17.5
2- 0.4
Emitter center
4.0± 0.2
18.5
3.0
40.0 ± 1
Pink transparent
epoxy resin(GL480
Transparent
epoxy resin(GL480Q
0.15
1.15
0.75
60˚
2- 0.4
(
Unit : mm
2
1
1 Cathode
2 Anode
Transparent
epoxy resin
0.15
)
)
2
1
1 Cathode
2 Anode
)
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GL480/GL480Q/GL483Q
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Response frequency
Radiant flux
Peak emission wavelength
Half intensity wavelength
Half intensity angle
Fig. 1 Forward Current vs.
Ambient Temperature
60
50
40
)
mA
(
F
30
20
Forward current I
10
0
Fig. 3 Spectral Distribution
100
80
)
%
(
60
40
0 25507510085
-25
Ambient temperature Ta (˚C
)
IF= 5mA
T
a
(
Ta = 25˚C
V
F
V
FM
I
R
C
t
f
c
Φ e 0.7 3.0 mW
λ p - 950 - nm
∆λ 45 - nm
∆θ ±13 -
IF= 20mA
= 0.5A
I
FM
=3V
V
R
= 0, f = 1MHz
V
R
I
= 20mA
F
= 5mA
I
F
= 5mA
I
F
I
= 20mA
F
- 1.2 1.4 V
- 3.0 4.0 V
--10µA
-50 -pF
-- 300 - kHz
-
-
-
Fig. 2 Peak Forward Current vs.
Duty Ratio
10000
5000
)
2000
mA
(
1000
FM
500
200
100
50
Peak forward current I
20
10
-3
25
10
10
Pulse width 100 µ s
T
= 25˚C
a
-2
25 52
Duty ratio
-1
10
<=
1
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
= 25˚C
1000
)
nm
(
P
975
950
IF= const.
)
˚
Relative radiant intensity
20
0
880 900 920 940 960 980
Wavelength λ (nm
1000 1020 1040
)
925
Peak emission wavelength λ
900
0 255075100
-25
Ambient temperature Ta (˚C
)
Loading...