Sharp GL4800 Datasheet

GL4800

GL4800

Thin Type Infrared Emitting
Diode

■ Features

1. Thin type (Thickness : 1.5mm

2. Beam angle (∆θ: TYP. ± 30˚

3. Radiant flux
: MIN. 0.7mW at IF= 20mA

(Φ

e

4. Epoxy resin package

)

)

)

■ Applications

1. Floppy disk drives

2. Optoelectronic switches

■ Absolute Maximum Ratings

Parameter Symbol Rating Unit
Power dissipation P 75 mW
Forward current I

*1

Peak forward current I
Reverse voltage V
Operating temperature T
Storage temperature T

*2

Soldering temperature T

*1 Pulse width<=100µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.

F

FM

R

opr

stg

sol

50 mA

1A
6V

- 25 to + 85

- 40 to + 85
260 ˚C

■ Outline Dimensions

MAX.

0.3

2 - C0.5

Rest of gate

0.8

φ0.8

2- 0.45
2- 0.9

Protruded resin

(

Ta= 25˚C

)

˚C
˚C

(

Unit : mm

0.7

0.25

1.5

± 0.2

0.8
Pink transparent

epoxy resin

1 Anode
2 Cathode

± 0.2

3.0

1.6

1.0

± 0.2

3.5

1.7

0.8

1.8

± 0.5

17.5

MIN.0.5

2.54

2

1

)

1

2

■ Electro-optical Characteristics

Parameter Conditions MIN. TYP. MAX. Unit
Forward voltage - 1.2 1.4 V
Peak forward voltage - 3.0 4.0 V
Reverse current - - 10 µ A
Terminal capacitance - 70 - pF
Frequency response -- 300 - kHz
Radiant flux 0.7 1.6 3.0 mW
Peak emission wavelength - 950 - nm
Half intensity wavelength - 45 - nm

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”

Symbol

V

F

V

FM

I

R

C

t

f

c

Φ

e

λ p

∆λ

IF= 20mA

= 0.5A

I

FM

=3V

V

R

= 0, f= 1MHz

V

R

= 20mA

I

F

= 5mA

I

F

= 5mA

I

F

(

Ta= 25˚C

)

GL4800

Fig. 1 Forward Current vs.

Ambient Temperature

60

50

)

mA

40

(

F

30

20

Forward current I

10

0

-25

0 25 10050 75 85

Ambient temperature Ta (˚C

Fig. 3 Spectral Distribution

100

)

80

%

(

60

40

)

IF= 5mA
T

= 25˚C

a

Fig. 2 Peak Forward Current vs. Duty Ratio

10000

5000

)

2000

mA

(

1000

FM

500

200
100

50

Peak forward current I

20
10

-3

25 25 25

10

10

-2

Duty ratio

Pulse width
<=100 µs
T

-1

10

= 25˚C

a

Fig. 4 Peak Emission Wavelength vs.

Ambient Temperature

)
nm

(

1000

975

P

950

IF= const.

1

Relative radiant intensity

20

0
880 920 960

900 940 980

Wavelength λ (nm

1000 1020 1040

)

925

Peak emission wavelength λ

900

-25

0255075100

Ambient temperature T

Fig. 5 Forward Current vs. Forward Voltage Fig. 6 Relative Radiant Flux vs.

Ambient Temperature

500

T

= 75˚C

a

50˚C

50

)
(

mA

F

200
100

20
10

5

Forward current I

2
1

0 0.5 1.0 1.5 2.0 2.5 3.0

Forward voltage V

25˚C
0˚C

-

(V

F

20˚C

3.5

)

20

10

5

2

1

Relative radiant flux

0.5

0.2

0.1

-25

0255075100

Ambient temperature T

a

a

(˚C

(˚C

)

IF=
const.

)