Sharp GL4100 Datasheet

GL4100
GL4100
Side View and Thin Flat Type Infrared Emitting Diode
Features
1. Compact flat package
2. Wide beam angle (Half intensity angle : ± 90˚ )
Applications
1. Mouses
2. Track balls
Outline Dimensions
3.0
2 - C0.5
MAX.
0.3
Gate burr
MAX.
Rugged resin
0.9
2 - 0.45
MAX.
+ 0.3
- 0.1
1
6˚
2.8
Rugged resin 0.2
Detector center
1.4
1.4
(
)
1.7
MIN.
0.5
2
(
)
2.54
6˚6˚ 6˚
1.8
0.7
0.7
4˚
4.0 4˚
- 10
+ 15
17.5
* ( ) : Reference dimensions * Tolerance : ± 0.2 mm
Pale red transparent epoxy resin
4˚
0.1 4˚
0.15
2 - 4
(Unit : mm)
MAX.
+ 0.3
- 0.1
1 Anode 2 Cathode
2
1
Absolute Maximum Ratings
(Ta=25˚C)
Parameter Symbol Rating Unit
Forward current
*1
Peak forward current Reverse voltage Power dissipation Operating temperatur Storage temperature
*2
Soldering temperature
* 1 Pulse width <=100µs, Duty ratio=0.01 * 2 For 5 seconds at the position of 1.4 mm from the resin edge
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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
I
F
I
FM
V
R
PmW
opr
T
stg
T
sol
50 mA
1 6
75
-25to+85
-40to+85 260 ˚C
A V
1.4mm
˚C ˚C
Soldering area
GL4100
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength
Half intensity wavelength Terminal capacitance
Response frequency Half intensity angle
V
V
Φ λ
∆λ
(Ta=25˚C)
= 20mA
F
FM
I
R
e
p
I
F
I
FM
V
R
= 20mA
I
F
= 5mA
I
F
= 0.5A
=3V
IF= 5mA
C
t
f
c
θ
V
= 0, f = 1MH
R
IF= 20mA
Z
-
- 1.2 1.4 V
3.0
- 4.0 V
--10µA
1.0 2.0
-mW
- 950 - nm
-45-nm
-50­300
-
pF
-
kH
Z
90- ˚
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
)
mA
(
40
F
30
20
Forward current I
10
0
- 25 0 25 50 75 10085
Ambient temperature Ta (˚C)
Fig. 2 Peak Forward Current vs. Duty Ratio
Pulse width<=100 µs Ta= 25˚C
)
1000
mA
(
FM
100
10
Peak forward current I
1
-4
10
10
-3
-2
10
Duty ratio
-1
10
1
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