SGS Thomson Microelectronics Z00607DA, Z00607MA Datasheet
Z00607MA
Z00607DA
®
May 1999 - Ed: 1
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tl= 50 °C0.8 A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
tp = 8.3 ms 10.5 A
tp = 10 m s 10
Non repetitive surge peak on-state current
(T
j
initial = 110°C, full cycle)
F = 60Hz 8
I
2
t
I
2
t Value for fusing
tp = 10 m s 0.5 A
2
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 110
°
C
Tl Maximum lead temperature for soldering during 10s 260
°
C
ABSOLUTE RATINGS
(limiting values)
I
T(RMS)
= 0.8A
V
DRM
= 400V and 600V
IGT = 5mA
FEATURES
Symbol Parameter
Z00607xA
Unit
DM
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 110°C
400 600 V
The Z006607xA triacs are intended for general
applications where high gate sensitivity is
required.
DESCRIPTION
A1
A2
G
A2
A1
G
TO92
(Plastic)
1/4
P
G (AV)
= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
GATE CHARACTE RIST ICS
(maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 150
°
C/W
Rth(j-l) Junction to lead 60
°
C/W
THERMAL RE SISTA NC ES
Symbol Test Conditions Quadrant
Sensitivity
Unit
07
I
GT
VD=12V (DC) RL=140
Ω
Tj= 25°C I-II-III MAX 5 mA
IV MAX 7
V
GT
VD=12V (DC) RL=140
Ω
Tj= 25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRM
RL=3.3kΩ
Tj= 110°C I-II-III-IV MIN 0.2 V
tgt V
D=VDRM
IG = 25mA
I
T
= 1.0A
dI
G
/dt = 0.25A/µs
Tj= 25°C I-II-III-IV TYP 2
µ
s
I
H
*I
T
= 200 mA Gate open Tj= 25°CMAX5mA
I
L
I
G
= 1.2 I
GT
Tj= 25°C I-III-IV MAX 10 mA
II MAX 20
V
TM
*ITM= 1.1A tp= 380µs T j= 25°CMAX1.5V
I
DRM
I
RRM
VD = V
DRM
VR = V
RRM
Tj= 25°CMAX10
µ
A
Tj= 110°CMAX0.1mA
dV/dt * VD=67%V
DRM
Gate open
Tj= 110°CMIN10V/
µ
s
(dV/dt)c *
(dI/dt)c = 0.35 A/ms
Tj= 110°CMIN1.5V/
µ
s
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ELECTRICAL CHARACT E RISTICS
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W)
α=180°
α=120°
α=90°
α=60°
α=30°
IT(RMS)(A)
180°
α
α
Fig 1:
Maximum power dissipation versus RMS
on-state current.
0 102030405060708090100110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W) Tlead (°C)
Rth(j-a)
Rth(j-l)
α=180°
110
50
70
90
Tamb(°C)
Fig 2:
Correlation between maximum power dissipation and maximum allowable temperatures
(Tamb and Tlead).
Z00607DA / Z00607MA
2/4
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