Z00607MA
Z00607DA
®
May 1999 - Ed: 1
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tl= 50 °C0.8 A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
tp = 8.3 ms 10.5 A
tp = 10 m s 10
Non repetitive surge peak on-state current
(T
j
initial = 110°C, full cycle)
F = 60Hz 8
I
2
t
I
2
t Value for fusing
tp = 10 m s 0.5 A
2
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 110
°
C
Tl Maximum lead temperature for soldering during 10s 260
°
C
ABSOLUTE RATINGS
(limiting values)
I
T(RMS)
= 0.8A
V
DRM
= 400V and 600V
IGT = 5mA
FEATURES
Symbol Parameter
Z00607xA
Unit
DM
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 110°C
400 600 V
The Z006607xA triacs are intended for general
applications where high gate sensitivity is
required.
DESCRIPTION
A1
A2
G
A2
A1
G
TO92
(Plastic)
1/4
P
G (AV)
= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
GATE CHARACTE RIST ICS
(maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 150
°
C/W
Rth(j-l) Junction to lead 60
°
C/W
THERMAL RE SISTA NC ES
Symbol Test Conditions Quadrant
Sensitivity
Unit
07
I
GT
VD=12V (DC) RL=140
Ω
Tj= 25°C I-II-III MAX 5 mA
IV MAX 7
V
GT
VD=12V (DC) RL=140
Ω
Tj= 25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRM
RL=3.3kΩ
Tj= 110°C I-II-III-IV MIN 0.2 V
tgt V
D=VDRM
IG = 25mA
I
T
= 1.0A
dI
G
/dt = 0.25A/µs
Tj= 25°C I-II-III-IV TYP 2
µ
s
I
H
*I
T
= 200 mA Gate open Tj= 25°CMAX5mA
I
L
I
G
= 1.2 I
GT
Tj= 25°C I-III-IV MAX 10 mA
II MAX 20
V
TM
*ITM= 1.1A tp= 380µs T j= 25°CMAX1.5V
I
DRM
I
RRM
VD = V
DRM
VR = V
RRM
Tj= 25°CMAX10
µ
A
Tj= 110°CMAX0.1mA
dV/dt * VD=67%V
DRM
Gate open
Tj= 110°CMIN10V/
µ
s
(dV/dt)c *
(dI/dt)c = 0.35 A/ms
Tj= 110°CMIN1.5V/
µ
s
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ELECTRICAL CHARACT E RISTICS
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W)
α=180°
α=120°
α=90°
α=60°
α=30°
IT(RMS)(A)
180°
α
α
Fig 1:
Maximum power dissipation versus RMS
on-state current.
0 102030405060708090100110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W) Tlead (°C)
Rth(j-a)
Rth(j-l)
α=180°
110
50
70
90
Tamb(°C)
Fig 2:
Correlation between maximum power dissipation and maximum allowable temperatures
(Tamb and Tlead).
Z00607DA / Z00607MA
2/4
12 510
0.1
1.0
10.0
50.0
ITSM(A),I²t(A²s)
Tj initial=25°C
ITSM
I²t
tp(ms)
Fig 7:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and c orresponding value of I
2
t.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
ITM(A)
Tj=25°C
Tj max.:
Vto= 0.95 V
Rd= 420 mΩ
Tj=Tj max.
VTM(V)
Fig 8:
On-state characteristics (maximum values).
-40 -20 0 20 40 60 80 100 120
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH[Tj] / IGT,IH[Tj=25°C]
IGT
IH
Tj(°C)
Fig 5:
Relative variation of gate trigger current and
holding current versus junction temperature (typical values).
1 10 100 1000
0
1
2
3
4
5
6
7
8
9
ITSM(A)
Tj initial=25°C
F=50Hz
Number of cycles
Fig 6:
Non repetitive surge peak on-state current
versus number of cycles.
0 102030405060708090100110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(RMS)(A)
α=180°
Rth(j-a)=Rth(j-l)
Rth(j-a)=150°C/W
Tamb(°C)
Fig 3:
RMS on-state current versus ambient temperature.
1E-3 1E-2 1E- 1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
K=[Zth(j-a)/Rth(j-a)]
tp(s)
Fig 4:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Z00607DA / Z00607MA
3/4
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PACKAGE ME CHANICAL D AT A
TO92 (Plastic)
D
F
a
E
BAC
REF.
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A1.35 0.053
B 4.70 0.185
C2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.45 0.017
Ordering type Marking Package Weight Base qty Delivery mode
Z00607DA 1BA2 Z0607DA TO92 0.2g. 2500 Bulk
Z00607MA 1BA2 Z0607MA TO92 0.2g. 2500 Bulk
Z00607DA / Z00607MA
4/4
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