SGS Thomson Microelectronics VNQ810M Datasheet

M

®

Janua ry 20 03 1/20

VNQ810M

QUAD CHANNEL HIGH SIDE DRIVER

■ CMOS COMPATIBLE INPUTS

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (**)

DESCRIPTION

The VNQ810M is a quad HSD formed by
assembling two VND810M chips in the same SO­28 package.The VND810M is a monolithic device
made by using STMicroelectronics VIPower M0-3
Technology, i ntended for dr iving any ki nd of load
with one side connected to ground.
Active VCC pin voltage clamp protec ts the device

against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown a nd automatic
restart protects the device against over load. The
current lim itation threshold is aimed at detectin g
the 21W/12V st andard b ulb as an overl oad fau lt.
The device detects open load condition both in on
and off state . Output shorted to VCC is detected
in the off state. Device automatically turn s off in
case of ground pin disconnection.

TYPE R

DS(on)

I

OUT

V

CC

VNQ810M 150 mΩ (*) 0.6 A (*) 36 V

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE TUBE T&R

SO-28

VNQ810M VNQ810M13TR

(*) Per each channel

ABSOLUTE MAXIMUM RATING

(**) See ap plication schematic at page 9

Symbol Parameter Value Unit

V

CC

DC Supply Vol tage 41 V

- V

CC

Reverse DC Supply Volt age -0.3 V

- I

gnd

DC Reverse Ground Pin Current -200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Ou tput Current -6 A

I

IN

DC Input Curre nt +/- 10 mA

I

STAT

DC Status Curr ent +/- 10 mA

V

ESD

Electro static Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPUT

- V

CC

4000
4000
5000
5000

V
V
V
V

E

MAX

Maximum Switching Energy
(L=310mH; R

L

=0Ω; V

bat

=13.5V; T

jstart

=150ºC; IL=0.9A)

174 mJ

P

tot

Power dissipation (per island) at T

lead

=25°C 6.25 W

T

j

Junction Operating Temperature Internally Limited °C

T

stg

Storage Temperat ure -55 to 150 °C

2/20

VNQ810M

BLOCK DIAGRAM

OVERTEMP. 1

V

CC1,2

GND1,2

INPUT1

OUTPUT1

OVERVOLTAGE

LOGIC

DRIVER 1

STATUS1

V

cc

CLAMP

UNDERVOLTAGE

CLAMP 1

OPENLOAD ON 1

CURRENT LIMITER 1

OPENLOAD OFF 1

OUTPUT2

DRIVER 2

CLAMP 2

OPENLOAD ON 2

OPENLOAD OFF 2

OVERTEMP. 2

INPUT2

STATUS2

CURRENT LIMITER 2

OVERTEMP. 3

V

CC3,4

GND3,4

INPUT3

OUTPUT3

OVERVOLT AGE

LOGIC

DRIVER 3

STATUS3

V

cc

CLAMP

UNDERVOLTAGE

CLAMP 3

OPENLOAD ON 3

CURRENT LIMITER 3

OPENLOAD OFF 3

OUTPUT4

DRIVER 4

CLAMP 4

OPENLOAD ON 4

OPENLOAD OFF 4

OVERTEMP. 4

INPUT4

STATUS4

CURRENT LIMITER 4

3/20

VNQ810M

CONNECTI O N DIAGR A M (TOP VIE W )

CURRENT AND VOLTAGE CONVENTIONS

VCC1,2
GND 1,2
INPUT1
STATUS1
STATUS2

V

CC

1,2

V

CC

3,4
GND 3,4
INPUT3

STATUS3

V

CC

3,4

V

CC

3,4

OUTPUT4

OUTPUT4

OUTPUT4

OUTPUT3

OUTPUT2

OUTPUT2

OUTPUT2

OUTPUT1

V

CC

1,2

OUTPUT3

OUTPUT3

OUTPUT1

OUTPUT1

INPUT2

STATUS4
INPUT4

1

14 15

28

I

S3,4

I

GND1,2

OUTPUT3

V

CC3,4

GND

1,2

INPUT2

I

OUT3

V

CC1,2

V

OUT4

OUTPUT2

I

OUT2

V

OUT3

INPUT1

I

IN1

STATUS1

I

STAT1

OUTPUT1

I

OUT1

OUTPUT4

I

OUT4

V

OUT2

V

OUT1

I

IN2

I

STAT2

I

STAT3

I

IN4

I

STAT4

STATUS2

STATUS3

STATUS4

INPUT3

INPUT4

V

STAT4

V

IN4

V

STAT3

V

IN3

V

STAT2

I

IN3

V

IN2

V

STAT1

V

IN1

I

S1,2

V

CC1,2

GND

3,4

I

GND3,4

V

CC3,4

4/20

VNQ810M

THERMAL DATA (Per island)

(*) When mounted on a standar d single-s ided FR-4 boar d with 0.5cm2 of Cu (at leas t 35µ m thick) co nnec ted to all VCC pins.

Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)

POWER OUTPUTS (Per each channel)

SWITCHING (Per each Channel) (VCC=13V)

LOGIC INPUT (Per each channel)

(**) Per island

Symbol Parameter Value Unit

R

thj-lead

Thermal R esistanc e Junctio n-lead per chip 20 °C/W

R

thj-amb

Thermal Resistance Junction-ambient (one chip ON) 60 (*) °C/W

R

thj-amb

Thermal Resistance Junction-ambient (two chips ON ) 46 (*) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

(**) Operating Supply Voltage 5.5 13 36 V

V

USD

(**) Undervoltage Shut-down 3 4 5.5 V

V

OV

(**) Overvoltage Shut-down 36 V

R

ON

On State Resistance

I

OUT

=0.5A; Tj=25°C

I

OUT

=0.5A; VCC> 8V

150
300

mΩ
mΩ

I

S

(**) Supply Current

Off State; V

CC

=13V; VIN=V

OUT

=0V

Off State; V

CC

=13V; VIN=V

OUT

=0V;

T

j

=25°C

On State; V

CC

=13V; VIN=5V; I

OUT

=0A

12

12

5

40

25

7

µA

µA

mA

I

L(off1)

Off State Output Curr ent VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Curr ent VIN=0V; V

OUT

=3.5V -75 0 µA

I

L(off3)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =125°C 5 µA

I

L(off4)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time RL=26Ω from VIN rising edge to V

OUT

=1.3V 30 µs

t

d(off)

Turn-off Dela y Ti me

RL=26Ω from VIN falling edge to
V

OUT

=11.7V

30 µs

dV

OUT

/dt

(on)

Turn-on Voltage Slope RL=26Ω from V

OUT

=1.3V to V

OUT

=10.4V

See

relative

diagram

V/µs

dV

OUT

/dt

(off)

Turn-off Voltage Slope RL=26Ω from V

OUT

=11.7V to V

OUT

=1.3V

See

relative

diagram

V/µs

Symbol Param eter Test Conditions Min Typ Max Unit

V

IL

Input Low Level 1.25 V

I

IL

Low Level Input Current VIN = 1.25V 1 µA

V

IH

Input High Level 3.25 V

I

IH

High Level Input Curr ent VIN = 3.25V 10 µA

V

I(hyst)

Input Hyst eresis Voltage 0.5 V

V

ICL

Input Clamp Voltage

I

IN

= 1mA

I

IN

= -1mA

66.8

-0.7

8V

V

1

5/20

VNQ810M

VCC - OUTPUT DIODE

ELECTRICAL CHARACTERISTICS (continued)
STATUS PIN (Per each channel)

PROTECTIONS (Per each channel)

OPENLOAD DETECTION (per each channel)

Symbol Param eter Test Conditions Min Typ Max Unit

V

F

Forward on Voltage -I

OUT

=0.5A; Tj=150°C 0.6 V

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

Status Low Output Voltage I

STAT

= 1.6 mA 0.5 V

I

LSTAT

Status Leakage Current Normal Operation; V

STAT

= 5V 10 µA

C

STAT

Status Pin Input
Capacitance

Normal Operation; V

STAT

= 5V 100 pF

V

SCL

Status Clamp Voltage

I

STAT

=1mA

I

STAT

=-1mA

66.8

-0.7

8V

V

Symbol Parame ter Test Condit ions Min Ty p Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temp erature 135 °C

T

hyst

Ther ma l Hy steres i s 7 15 °C

t

SDL

Status Delay in Overload
Conditions

Tj>T

TSD

20 µs

I

lim

Current limitation

5.5V < V

CC

< 36V

0.7 0.9 1.4

1.4

A
A

V

demag

Turn-off Output Clamp
Voltage

I

OUT

=0.5A VCC-41 VCC-48 VCC-55 V

Symbol Param eter Test Conditions Min Typ M ax Uni t

I

OL

Openload ON State
Detectio n Threshold

V

IN

=5V 20 40 80 mA

t

DOL(on)

Openload ON State
Detection Delay

I

OUT

=0A 200 µs

V

OL

Openload OFF State
Voltage Detection
Threshold

VIN=0V 1.5 2.5 3.5 V

t

DOL(off)

Openload Detection Delay
at Turn Off

1000 µs

2

V

INn

V

STATn

t

DOL(off)

OPENLOAD STATUS TIMING (with external pull-up)

V

INn

V

STATn

OVERTEMP STA TUS TIMING

t

SDL

t

SDL

I

OUT

< I

OL

V

OUT

> V

OL

t

DOL(on)

Tj > T

TSD

6/20

VNQ810M

t

t

v

OUTn

V

INn

80%

10%

dV

OUT

/dt

(on)

t

d(off)

90%

dV

OUT

/dt

(off)

t

d(on)

Switching time Waveforms

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

L

H

L

H

H
H

Current Limitation

L
H
H

L
X
X

H

(T

j

< T

TSD

) H

(T

j

> T

TSD

) L

Overtemperature

L

H

L

L

H

L

Undervoltage

L

H

L

L

X
X

Overvoltage

L

H

L

L

H
H

Output Voltage > V

OL

L

H

H
H

L

H

Output Current < I

OL

L

H

L
H

H

L